摘要
The dislocations and Te precipitates in CdZnTe crystals grown by an accelerated crucible rotation technique are studied with a transmission electron microscope. The edge dislocations with the Burger vector of b=a/6[1̄12] and Te precipitates of different morphologies are observed directly. We suggest that the formation of dislocation loops result from Te precipitates. When the matrix is loaded with Te precipitates, misfit stress will be introduced into the crystals, therefore leading to increased dislocation density. Dislocation loops are usually associated with Te precipitates.
源语言 | 英语 |
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页(从-至) | 1760-1763 |
页数 | 4 |
期刊 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
卷 | 26 |
期 | 9 |
出版状态 | 已出版 - 9月 2005 |