Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

Yaxu Gu, Wanqi Jie, Linglong Li, Yadong Xu, Yaodong Yang, Jie Ren, Gangqiang Zha, Tao Wang, Lingyan Xu, Yihui He, Shouzhi Xi

科研成果: 期刊稿件文章同行评审

7 引用 (Scopus)

摘要

To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.

源语言英语
页(从-至)48-53
页数6
期刊Micron
88
DOI
出版状态已出版 - 1 9月 2016

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