TY - JOUR
T1 - Synthesis, low-temperature sintering and the dielectric properties of the ZnO-(1 - x)TiO2-xSnO2 (x = 0.04-0.2)
AU - Liu, Xiangchun
AU - Gao, Feng
AU - Tian, Changsheng
PY - 2008/3/4
Y1 - 2008/3/4
N2 - ZnO-(1 - x)TiO2-xSnO2 (x = 0.04-0.2) ceramics were prepared by conventional mixed-oxide method combined with a chemical processing. Fine particle powders were prepared by chemical processing to activate the formation of compound and to improve the sinterability. One wt.% of V2O5 and B2O3 with the mole ratios of 3:1 were used to lower the sintering temperature of ceramics. The effect of Sn content on phase structure and dielectric properties were investigated. The results show that the substituting Sn for Ti accelerates the hexagonal phase transition to cubic phase, and an inverse spinel structure Zn2(Ti1-xSnx)O4 solid solution forms. The best dielectric properties obtained at x = 0.12. The ZnO-0.88TiO2-0.12SnO2 ceramics sintered at 900 °C exhibit a good dielectric property: εr = 29 and tan δ = 9.86 × 10-5. Due to their good dielectric properties, low firing characteristics, ZnO-(1 - x)TiO2-xSnO2 (x = 0.04-0.2) can serve as the promising microwave dielectric capacitor.
AB - ZnO-(1 - x)TiO2-xSnO2 (x = 0.04-0.2) ceramics were prepared by conventional mixed-oxide method combined with a chemical processing. Fine particle powders were prepared by chemical processing to activate the formation of compound and to improve the sinterability. One wt.% of V2O5 and B2O3 with the mole ratios of 3:1 were used to lower the sintering temperature of ceramics. The effect of Sn content on phase structure and dielectric properties were investigated. The results show that the substituting Sn for Ti accelerates the hexagonal phase transition to cubic phase, and an inverse spinel structure Zn2(Ti1-xSnx)O4 solid solution forms. The best dielectric properties obtained at x = 0.12. The ZnO-0.88TiO2-0.12SnO2 ceramics sintered at 900 °C exhibit a good dielectric property: εr = 29 and tan δ = 9.86 × 10-5. Due to their good dielectric properties, low firing characteristics, ZnO-(1 - x)TiO2-xSnO2 (x = 0.04-0.2) can serve as the promising microwave dielectric capacitor.
KW - A. Ceramics
KW - A. Electronic materials
KW - B. Chemical synthesis
KW - D. Dielectric properties
UR - http://www.scopus.com/inward/record.url?scp=38649090063&partnerID=8YFLogxK
U2 - 10.1016/j.materresbull.2007.03.029
DO - 10.1016/j.materresbull.2007.03.029
M3 - 文章
AN - SCOPUS:38649090063
SN - 0025-5408
VL - 43
SP - 693
EP - 699
JO - Materials Research Bulletin
JF - Materials Research Bulletin
IS - 3
ER -