Surface states and passivation of p-Cd0.9Zn0.1Te crystal

Li Qiang; Jie Wanqi

doi:10.1016/j.nima.2006.02.006

Surface states and passivation of p-Cd_0.9Zn_0.1Te crystal

Li Qiang, Jie Wanqi

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

9 引用（Scopus）

摘要

Angle-resolved photoemission spectroscopy is used to characterize the surface states of the clean p-CdZnTe surface. A 0.8 eV surface band with the peak at 0.9 eV below the Fermi level is identified. The surface electron density is about 6.9×10¹⁴ electrons/cm². By comparing the X-ray photoelectron spectroscopy spectrum of etched and passivated surfaces of p-CdZnTe, it is found that passivation with NH₄F/H₂O₂ introduced TeO₂ oxide film with the thickness about 3.1 nm on p-CdZnTe surface. Meanwhile, Photoluminescence spectra confirmed that passivation treatment minimized the surface trap states density and decreased the deep level impurity defects related to Cd vacancies.

源语言	英语
页（从-至）	468-471
页数	4
期刊	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
卷	562
期	1
DOI	https://doi.org/10.1016/j.nima.2006.02.006
出版状态	已出版 - 15 6月 2006

访问文件

10.1016/j.nima.2006.02.006

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{b1ee1b5d49e54e23bdbd14b7cb87cc20,

title = "Surface states and passivation of p-Cd0.9Zn0.1Te crystal",

abstract = "Angle-resolved photoemission spectroscopy is used to characterize the surface states of the clean p-CdZnTe surface. A 0.8 eV surface band with the peak at 0.9 eV below the Fermi level is identified. The surface electron density is about 6.9×1014 electrons/cm2. By comparing the X-ray photoelectron spectroscopy spectrum of etched and passivated surfaces of p-CdZnTe, it is found that passivation with NH4F/H2O2 introduced TeO2 oxide film with the thickness about 3.1 nm on p-CdZnTe surface. Meanwhile, Photoluminescence spectra confirmed that passivation treatment minimized the surface trap states density and decreased the deep level impurity defects related to Cd vacancies.",

keywords = "ARPS, CdZnTe crystal, Passivation, PL, XPS",

author = "Li Qiang and Jie Wanqi",

year = "2006",

month = jun,

day = "15",

doi = "10.1016/j.nima.2006.02.006",

language = "英语",

volume = "562",

pages = "468--471",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Surface states and passivation of p-Cd0.9Zn0.1Te crystal

AU - Qiang, Li

AU - Wanqi, Jie

PY - 2006/6/15

Y1 - 2006/6/15

N2 - Angle-resolved photoemission spectroscopy is used to characterize the surface states of the clean p-CdZnTe surface. A 0.8 eV surface band with the peak at 0.9 eV below the Fermi level is identified. The surface electron density is about 6.9×1014 electrons/cm2. By comparing the X-ray photoelectron spectroscopy spectrum of etched and passivated surfaces of p-CdZnTe, it is found that passivation with NH4F/H2O2 introduced TeO2 oxide film with the thickness about 3.1 nm on p-CdZnTe surface. Meanwhile, Photoluminescence spectra confirmed that passivation treatment minimized the surface trap states density and decreased the deep level impurity defects related to Cd vacancies.

AB - Angle-resolved photoemission spectroscopy is used to characterize the surface states of the clean p-CdZnTe surface. A 0.8 eV surface band with the peak at 0.9 eV below the Fermi level is identified. The surface electron density is about 6.9×1014 electrons/cm2. By comparing the X-ray photoelectron spectroscopy spectrum of etched and passivated surfaces of p-CdZnTe, it is found that passivation with NH4F/H2O2 introduced TeO2 oxide film with the thickness about 3.1 nm on p-CdZnTe surface. Meanwhile, Photoluminescence spectra confirmed that passivation treatment minimized the surface trap states density and decreased the deep level impurity defects related to Cd vacancies.

KW - ARPS

KW - CdZnTe crystal

KW - Passivation

KW - PL

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=33646807459&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2006.02.006

DO - 10.1016/j.nima.2006.02.006

M3 - 文章

AN - SCOPUS:33646807459

SN - 0168-9002

VL - 562

SP - 468

EP - 471

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Surface states and passivation of p-Cd0.9Zn0.1Te crystal

摘要

访问文件

其它文件与链接

指纹

引用此

Surface states and passivation of p-Cd_0.9Zn_0.1Te crystal