摘要
The variation of density and diameter of Te inclusions in indium-doped Cd0.9Zn0.1Te (CZT) single crystals during annealing under Cd/Zn vapor were studied via IR microscopy observation. The results indicated that the density of Te inclusions distributed homogeneously before annealing, while after annealing, the density of Te inclusions increased for about one order near the surface, but decreased for one order inside, and the density increased gradually along the direction of temperature gradient. The diameter of Te inclusions was mainly between 1 μm and 25 μm before annealing, while those with the diameter <45 μm near the wafer's surface and those <5 μm and >25 μm inside increased notably after annealing. The reason for the above variation was determined by Te inclusions migration along the direction of temperature gradient. And during the migration, Te inclusions grew via incorporating with those with similar diameter and Ostwald ripening among those with comparatively different diameter. But the ripening was not sufficient so that many smaller Te inclusions remained in the annealed samples.
| 源语言 | 英语 |
|---|---|
| 页（从-至） | 7135-7138 |
| 页数 | 4 |
| 期刊 | Gongneng Cailiao/Journal of Functional Materials |
| 卷 | 45 |
| 期 | 7 |
| DOI | |
| 出版状态 | 已出版 - 2014 |