Structural, defect, and photoelectric characterization of CdTe-based single crystals grown by a vertical Bridgman method

Boyang Wang, Pengfei Yu, Yuting Li, Qingyang Xu, Yize Zhang, Wanqi Jie

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摘要

This study presents a comparative characterization of CdZnTe, CdMnTe, and CdMgTe single crystals, grown via a modified vertical Bridgman method, focusing on their structural, defect, optical, and electrical properties for room-temperature radiation detection applications. XRD analysis confirmed the sphalerite structure of all three crystals, with distinct preferred orientations influenced by spontaneous nucleation. CdMgTe crystal featured a lower density of Te inclusions (approximately 103 cm−2) compared to CdZnTe and CdMnTe. TEM analysis revealed all three crystals contained nanoscale Te precipitates, contributing to lattice distortion and dislocations. Compared to CdZnTe crystal, CdMnTe and CdMgTe exhibit better compositional uniformity. CdZnTe demonstrated superior crystal quality, with an average infrared transmittance of 62 % and a distinct free exciton peak in the photoluminescence spectrum. The resistivity of all three crystals met the specifications for room-temperature radiation detectors, with CdZnTe, exhibiting a resistivity of up to 7.09 × 1010 Ω·cm, showing the best detector performance.

源语言英语
文章编号114899
期刊Materials Characterization
223
DOI
出版状态已出版 - 5月 2025

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