摘要
Based on HgTe-CdTe quasi-binary phase diagram, the redistribution and diffusion of the solute during Bridgman single crystal growth of Hg1-x-CdxTe were discussed. The up-limits of growth rate at different temperature gradients were deduced on the consideration of keeping planar liquid/solid interface and lower limit was suggested for longer homogeneous crystal in constitution.
源语言 | 英语 |
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页(从-至) | 505-509 |
页数 | 5 |
期刊 | Gongneng Cailiao/Journal of Functional Materials |
卷 | 26 |
期 | 6 |
出版状态 | 已出版 - 1 1月 1995 |