Self-crystallization of hydrogenated silicon filmin plasma enhanced chemical vapor deposition

In order to investigate the self-crystallized deposition of silicon film in a deposition growth process, hydrogenated silicon thin films were deposited via a plasma enhanced chemical vapor deposition (PECVD) technique. The microstructure of silicon films obtained at different deposition durations was investigated. The results indicate that the microstructure of the films depends on the deposition duration. The film obtained at the deposition duration of 30 min is amorphous. When the deposition time is 60 min, the crystalline grains can appear in the film. The crystallinity and grain size increase and the amorphous degree in the film decreases when the deposition time increases. In addition, the deposition rate of the film also increases as the deposition time increases. In the deposition process, the surface state change of silicon film with the deposition time could be the major factor for the self-crystallization of silicon film.