TY - JOUR
T1 - Selective Ions Exchange Reactions Endow Defective Heterovalent Copper-Based Selenides With Enhanced Dielectric Polarization Response
AU - Liu, Jiaolong
AU - Liu, Zhuolin
AU - Ren, Junkai
AU - bian, Hui
AU - Zhou, Xuejiao
AU - Yin, Moxuan
AU - Li, Sichen
AU - Zhang, Peijun
AU - Qu, Dan
AU - Wei, Bing
AU - Wu, Hongjing
N1 - Publisher Copyright:
© 2025 Wiley-VCH GmbH.
PY - 2025
Y1 - 2025
N2 - Defective heterovalent selenides provide a spacious arena for creating emergent electromagnetic (EM) phenomena that are unattainable in the conventional constituent counterparts. However, there are still synthetic methodological challenges, and in-depth understanding of the EM properties, particularly correlation between tailored polarization sites and dielectric polarization response, are significantly inadequate. Herein, a selective ions exchange strategy driven by concentration-regulated (Case 1) and time-evoked (Case 2) approaches, is innovatively proposed to design series of defective heterovalent copper-based selenides. The controllable phase evolution tailored by concentration-regulated mixed cation/anion exchange is responsible for heterointerfaces levels (Case 1), while Cu+/Cu2+ electronic configurations controlled by time-evoked cation exchange accounted for further manipulating heterointerfaces/defects levels and enriching polarization sites (Case 2). The coupling of nonstoichiometric Cu2−xSe-containing heterointerfaces, unsaturated Se vacancies and multi-valence configurations, rather than themselves alone even at a higher level, imparted abundant polarization sites to trigger boosted polarization response for defective heterovalent selenides. Consequently, this designed defective heterovalent selenide (ZnSe/CuSe/Cu2-xSe) deliveres a broad bandwidth of 6.89 GHz compare to parent ZnSe without dielectric response, outperforming most reported metal selenides until now. This innovative strategy overcame the bottlenecks of conventional synthetic methodology, providing a paradigm for fabricating sophisticated defective heterovalent materials for versatile applications beyond EM absorption.
AB - Defective heterovalent selenides provide a spacious arena for creating emergent electromagnetic (EM) phenomena that are unattainable in the conventional constituent counterparts. However, there are still synthetic methodological challenges, and in-depth understanding of the EM properties, particularly correlation between tailored polarization sites and dielectric polarization response, are significantly inadequate. Herein, a selective ions exchange strategy driven by concentration-regulated (Case 1) and time-evoked (Case 2) approaches, is innovatively proposed to design series of defective heterovalent copper-based selenides. The controllable phase evolution tailored by concentration-regulated mixed cation/anion exchange is responsible for heterointerfaces levels (Case 1), while Cu+/Cu2+ electronic configurations controlled by time-evoked cation exchange accounted for further manipulating heterointerfaces/defects levels and enriching polarization sites (Case 2). The coupling of nonstoichiometric Cu2−xSe-containing heterointerfaces, unsaturated Se vacancies and multi-valence configurations, rather than themselves alone even at a higher level, imparted abundant polarization sites to trigger boosted polarization response for defective heterovalent selenides. Consequently, this designed defective heterovalent selenide (ZnSe/CuSe/Cu2-xSe) deliveres a broad bandwidth of 6.89 GHz compare to parent ZnSe without dielectric response, outperforming most reported metal selenides until now. This innovative strategy overcame the bottlenecks of conventional synthetic methodology, providing a paradigm for fabricating sophisticated defective heterovalent materials for versatile applications beyond EM absorption.
KW - defective heterovalent selenides
KW - dielectric polarization
KW - heterointerfaces
KW - ions exchange
UR - http://www.scopus.com/inward/record.url?scp=85215294436&partnerID=8YFLogxK
U2 - 10.1002/adfm.202420239
DO - 10.1002/adfm.202420239
M3 - 文章
AN - SCOPUS:85215294436
SN - 1616-301X
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -