摘要
Sn-based perovskites are ideal eco-friendly candidates as an alternative to Pb-based ones in next-generation optoelectronics. However, a polycrystalline Sn-based perovskite thin film deposited from the spin-coating process suffers from high defect density and poor chemical stability, causing inferior performance of optoelectronic devices. Herein, we report the fabrication of a compact FASnI3 quasi-single-crystal (QSC) thick film by developing a seed-crystal-assisted space-confined (SSG) strategy. The crystal growth dynamics in the SSG process is identified to be crystal size-dependent Ostwald ripening, and the key parameters are carefully investigated. After optimization, a compact n-type FASnI3 QSC thick film can be produced with exceptional properties, including thickness of 12 μm, crystal size of 36.63 ± 12.24 μm, defect density of 5.68 × 1012 cm-3, and charge mobility of 10.1 cm2 V-1 s-1. The corresponding photodetector exhibits self-driven detection ability and detectivity of 1010 Jones at low bias of 0.1 V. This work opens up a new avenue for developing high-performing Sn-based optoelectronic devices.
源语言 | 英语 |
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页(从-至) | 5045-5055 |
页数 | 11 |
期刊 | ACS Energy Letters |
卷 | 9 |
期 | 10 |
DOI | |
出版状态 | 已出版 - 11 10月 2024 |