摘要
A surface Ni-doped MgO-Au thin film was prepared by reactive magnetron sputtering and showed a superior secondary electron emission (SEE) performance under continuous electron bombardment in comparison with an undoped one. The experimental results show that the surface Ni-doping improves the electrical conductivity of MgO-Au film due to a size reduction of MgO particles and a bandgap narrowing of the surface MgO layer. Additionally, a 3.4 at% Ni-doped MgO-Au film exhibits an average SEE decay rate per hour as low as 2.6% with a reduction of 31.6% under continuous electron bombardment compared with the undoped one, and especially its SEE coefficient turns to be higher after 4-hour electron bombardment. Thus, the surface Ni-doping is an effective strategy to suppress the surface charging effect and subsequent SEE decay of MgO-Au film owing to the improvement of electrical conductivity.
源语言 | 英语 |
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文章编号 | 128452 |
期刊 | Materials Letters |
卷 | 278 |
DOI | |
出版状态 | 已出版 - 1 11月 2020 |