摘要
The I-V characteristics of Au/p-CZT contacts for various CZT surface treatment including etching and passivation were investigated in this paper. After the passivation, TeO2 oxide layer with the thickness of 3.1nm was determined on the surface of CZT wafer through the analysis on the CZT surface elements by XPS. I-V characteristics of Au/p-CZT contacts with different surface treatment CZT wafer's surface were measured by Agilent 4339B high resistance meter. It was shown that etching and passivation could increase the barrier height of the Au/p-CZT and decrease the leakage current.
源语言 | 英语 |
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页(从-至) | 630-631+634 |
期刊 | Gongneng Cailiao/Journal of Functional Materials |
卷 | 37 |
期 | 4 |
出版状态 | 已出版 - 4月 2006 |