Polymer-based resistive memory materials and devices

Wen Peng Lin, Shu Juan Liu, Tao Gong, Qiang Zhao, Wei Huang

科研成果: 期刊稿件文献综述同行评审

475 引用 (Scopus)

摘要

Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D-stacking capability, and large capacity for data storage, polymer-based resistive memories have been a promising alternative or supplementary devices to conventional inorganic semiconductor-based memory technology, and attracted significant scientific interest as a new and promising research field. In this review, we first introduced the general characteristics of the device structures and fabrication, memory effects, switching mechanisms, and effects of electrodes on memory properties associated with polymer-based resistive memory devices. Subsequently, the research progress concerning the use of single polymers or polymer composites as active materials for resistive memory devices has been summarized and discussed. In particular, we consider a rational approach to their design and discuss how to realize the excellent memory devices and understand the memory mechanisms. Finally, the current challenges and several possible future research directions in this field have also been discussed.

源语言英语
页(从-至)570-606
页数37
期刊Advanced Materials
26
4
DOI
出版状态已出版 - 29 1月 2014
已对外发布

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