摘要
We demonstrate a reconfigurable black phosphorus electrical field transistor, which is van der Waals heterostructured with few-layer graphene and hexagonal boron nitride flakes. Varied homojunctions could be realized by controlling both sourcedrain and top-gate voltages. With the spatially resolved scanning photocurrent microscopy technique, photovoltaic photocurrents originated from the band-bending regions are observed, confirming nine different configurations for each set of fixed voltages. In addition, as a phototransistor, high responsivity (∼800 mA/W) and fast response speed (∼230 μs) are obtained from the device. The reconfigurable van der Waals heterostructured transistors may offer a promising structure towards electrically tunable black phosphorus-based optoelectronic devices.
源语言 | 英语 |
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文章编号 | 128502 |
期刊 | Chinese Physics B |
卷 | 27 |
期 | 12 |
DOI | |
出版状态 | 已出版 - 12月 2018 |