Passivation of p-CZT crystal and its effects on C-V characteristics

Qiang Li; Wan Qi Jie; Li Fu; Xiao Qin Wang; Gang Qiang Zha; Ge Yang

Passivation of p-CZT crystal and its effects on C-V characteristics

Qiang Li, Wan Qi Jie, Li Fu, Xiao Qin Wang, Gang Qiang Zha, Ge Yang

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

By using NH₄F/H₂O₂ as the surface passivant for p-CZT crystals, the C-V characteristics of p-CZT wafers before and after passivation surface treatments are investigated comparatively. After the passivation treatment, TeO₂ oxide layer with the thickness of about 3.1 nm is obtained on the surface of CZT wafer through XPS analysis. C-V test of CZT wafers is carried out by using Agilent 4294A Precision Impedance Analyzer with the frequency of 1 MHz. The results show that passivated CZT wafer has higher barrier height, i. e. , the barrier height of passivated CZT wafer is 1.512 V while that of non-passivated CZT wafer is 1.393 V.

源语言	英语
页（从-至）	306-308
页数	3
期刊	Bandaoti Guangdian/Semiconductor Optoelectronics
卷	27
期	3
出版状态	已出版 - 6月 2006

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{811b6a823b2349338cd2f595126f091b,

title = "Passivation of p-CZT crystal and its effects on C-V characteristics",

abstract = "By using NH4F/H2O2 as the surface passivant for p-CZT crystals, the C-V characteristics of p-CZT wafers before and after passivation surface treatments are investigated comparatively. After the passivation treatment, TeO2 oxide layer with the thickness of about 3.1 nm is obtained on the surface of CZT wafer through XPS analysis. C-V test of CZT wafers is carried out by using Agilent 4294A Precision Impedance Analyzer with the frequency of 1 MHz. The results show that passivated CZT wafer has higher barrier height, i. e. , the barrier height of passivated CZT wafer is 1.512 V while that of non-passivated CZT wafer is 1.393 V.",

keywords = "Au/CZT contacts, C-V characteristics, Passivation",

author = "Qiang Li and Jie, {Wan Qi} and Li Fu and Wang, {Xiao Qin} and Zha, {Gang Qiang} and Ge Yang",

year = "2006",

month = jun,

language = "英语",

volume = "27",

pages = "306--308",

journal = "Bandaoti Guangdian/Semiconductor Optoelectronics",

issn = "1001-5868",

publisher = "China National Publishing Industry Trading Corporation",

number = "3",

}

TY - JOUR

T1 - Passivation of p-CZT crystal and its effects on C-V characteristics

AU - Li, Qiang

AU - Jie, Wan Qi

AU - Fu, Li

AU - Wang, Xiao Qin

AU - Zha, Gang Qiang

AU - Yang, Ge

PY - 2006/6

Y1 - 2006/6

N2 - By using NH4F/H2O2 as the surface passivant for p-CZT crystals, the C-V characteristics of p-CZT wafers before and after passivation surface treatments are investigated comparatively. After the passivation treatment, TeO2 oxide layer with the thickness of about 3.1 nm is obtained on the surface of CZT wafer through XPS analysis. C-V test of CZT wafers is carried out by using Agilent 4294A Precision Impedance Analyzer with the frequency of 1 MHz. The results show that passivated CZT wafer has higher barrier height, i. e. , the barrier height of passivated CZT wafer is 1.512 V while that of non-passivated CZT wafer is 1.393 V.

AB - By using NH4F/H2O2 as the surface passivant for p-CZT crystals, the C-V characteristics of p-CZT wafers before and after passivation surface treatments are investigated comparatively. After the passivation treatment, TeO2 oxide layer with the thickness of about 3.1 nm is obtained on the surface of CZT wafer through XPS analysis. C-V test of CZT wafers is carried out by using Agilent 4294A Precision Impedance Analyzer with the frequency of 1 MHz. The results show that passivated CZT wafer has higher barrier height, i. e. , the barrier height of passivated CZT wafer is 1.512 V while that of non-passivated CZT wafer is 1.393 V.

KW - Au/CZT contacts

KW - C-V characteristics

KW - Passivation

UR - http://www.scopus.com/inward/record.url?scp=33746784204&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:33746784204

SN - 1001-5868

VL - 27

SP - 306

EP - 308

JO - Bandaoti Guangdian/Semiconductor Optoelectronics

JF - Bandaoti Guangdian/Semiconductor Optoelectronics

IS - 3

ER -

Passivation of p-CZT crystal and its effects on C-V characteristics

摘要

其它文件与链接

指纹

引用此