P -type electrical, photoconductive, and anomalous ferromagnetic properties of Cu2 O nanowires

L. Liao; B. Yan; Y. F. Hao; G. Z. Xing; J. P. Liu; B. C. Zhao; Z. X. Shen; T. Wu; L. Wang; J. T.L. Thong; C. M. Li; W. Huang; T. Yu

doi:10.1063/1.3097029

P -type electrical, photoconductive, and anomalous ferromagnetic properties of Cu₂ O nanowires

L. Liao, B. Yan, Y. F. Hao, G. Z. Xing, J. P. Liu, B. C. Zhao, Z. X. Shen, T. Wu, L. Wang, J. T.L. Thong, C. M. Li, W. Huang, T. Yu

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109 引用（Scopus）

摘要

Cu₂ O nanowires are synthesized by reduction of CuO nanowires with hydrogen gas. Strong green photoluminescence dominated by band-edge emission is observed. Field effect transistors fabricated from individual Cu₂ O nanowires present high on-off ratio (> 106) and high mobility (>95 cm2 /V s). Furthermore, the device demonstrates a fast photoelectric response to blue illumination in air at room temperature. In addition, anomalous ferromagnetism appears in Cu₂ O nanowires, which may originate from the defects in Cu₂ O nanowires. This work shows the application potentials of the Cu₂ O nanowires, especially in an electrical and photonic device.

源语言	英语
文章编号	113106
期刊	Applied Physics Letters
卷	94
期	11
DOI	https://doi.org/10.1063/1.3097029
出版状态	已出版 - 2009
已对外发布	是

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title = "P -type electrical, photoconductive, and anomalous ferromagnetic properties of Cu2 O nanowires",

abstract = "Cu2 O nanowires are synthesized by reduction of CuO nanowires with hydrogen gas. Strong green photoluminescence dominated by band-edge emission is observed. Field effect transistors fabricated from individual Cu2 O nanowires present high on-off ratio (> 106) and high mobility (>95 cm2 /V s). Furthermore, the device demonstrates a fast photoelectric response to blue illumination in air at room temperature. In addition, anomalous ferromagnetism appears in Cu2 O nanowires, which may originate from the defects in Cu2 O nanowires. This work shows the application potentials of the Cu2 O nanowires, especially in an electrical and photonic device.",

author = "L. Liao and B. Yan and Hao, {Y. F.} and Xing, {G. Z.} and Liu, {J. P.} and Zhao, {B. C.} and Shen, {Z. X.} and T. Wu and L. Wang and Thong, {J. T.L.} and Li, {C. M.} and W. Huang and T. Yu",

year = "2009",

doi = "10.1063/1.3097029",

language = "英语",

volume = "94",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - P -type electrical, photoconductive, and anomalous ferromagnetic properties of Cu2 O nanowires

AU - Liao, L.

AU - Yan, B.

AU - Hao, Y. F.

AU - Xing, G. Z.

AU - Liu, J. P.

AU - Zhao, B. C.

AU - Shen, Z. X.

AU - Wu, T.

AU - Wang, L.

AU - Thong, J. T.L.

AU - Li, C. M.

AU - Huang, W.

AU - Yu, T.

PY - 2009

Y1 - 2009

N2 - Cu2 O nanowires are synthesized by reduction of CuO nanowires with hydrogen gas. Strong green photoluminescence dominated by band-edge emission is observed. Field effect transistors fabricated from individual Cu2 O nanowires present high on-off ratio (> 106) and high mobility (>95 cm2 /V s). Furthermore, the device demonstrates a fast photoelectric response to blue illumination in air at room temperature. In addition, anomalous ferromagnetism appears in Cu2 O nanowires, which may originate from the defects in Cu2 O nanowires. This work shows the application potentials of the Cu2 O nanowires, especially in an electrical and photonic device.

AB - Cu2 O nanowires are synthesized by reduction of CuO nanowires with hydrogen gas. Strong green photoluminescence dominated by band-edge emission is observed. Field effect transistors fabricated from individual Cu2 O nanowires present high on-off ratio (> 106) and high mobility (>95 cm2 /V s). Furthermore, the device demonstrates a fast photoelectric response to blue illumination in air at room temperature. In addition, anomalous ferromagnetism appears in Cu2 O nanowires, which may originate from the defects in Cu2 O nanowires. This work shows the application potentials of the Cu2 O nanowires, especially in an electrical and photonic device.

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U2 - 10.1063/1.3097029

DO - 10.1063/1.3097029

M3 - 文章

AN - SCOPUS:63049104089

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 113106

ER -

P -type electrical, photoconductive, and anomalous ferromagnetic properties of Cu2 O nanowires

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P -type electrical, photoconductive, and anomalous ferromagnetic properties of Cu₂ O nanowires