Oxidation behaviors of C/SiC in the oxidizing environments containing water vapor

Xiaowei Yin; Laifei Cheng; Litong Zhang; Yongdong Xu

doi:10.1016/S0921-5093(02)00644-5

Oxidation behaviors of C/SiC in the oxidizing environments containing water vapor

Xiaowei Yin, Laifei Cheng, Litong Zhang, Yongdong Xu

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

83 引用（Scopus）

摘要

Compared with those in oxygen/argon mixtures, the oxidation behaviors of C/SiC materials are studied in H₂O/argon gas mixtures and in H₂O/O₂/argon mixtures, respectively. By measuring the thickness of the SiO₂ scale formed on the SiC coating, the oxidation parabolic rate constants and the activation energies of CVD SiC are calculated. Experimental results point out that the oxidation of the SiC matrix is strongly enhanced in the environments containing water vapor. By microscopy observations and XRD analysis, the stresses in the silica scale are studied. By thermo-gravity analysis, the oxidation kinetics of C/SiC materials is investigated. The weight loss of C/SiC materials in H₂O/O₂/argon mixtures is smaller than in dry oxygen with the same oxygen partial pressure, because the apparently formed SiO₂ scale in H₂O/O₂/argon mixtures acts as an effective oxidation barrier.

源语言	英语
页（从-至）	47-53
页数	7
期刊	Materials Science and Engineering: A
卷	348
期	1-2
DOI	https://doi.org/10.1016/S0921-5093(02)00644-5
出版状态	已出版 - 15 5月 2003

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title = "Oxidation behaviors of C/SiC in the oxidizing environments containing water vapor",

abstract = "Compared with those in oxygen/argon mixtures, the oxidation behaviors of C/SiC materials are studied in H2O/argon gas mixtures and in H2O/O2/argon mixtures, respectively. By measuring the thickness of the SiO2 scale formed on the SiC coating, the oxidation parabolic rate constants and the activation energies of CVD SiC are calculated. Experimental results point out that the oxidation of the SiC matrix is strongly enhanced in the environments containing water vapor. By microscopy observations and XRD analysis, the stresses in the silica scale are studied. By thermo-gravity analysis, the oxidation kinetics of C/SiC materials is investigated. The weight loss of C/SiC materials in H2O/O2/argon mixtures is smaller than in dry oxygen with the same oxygen partial pressure, because the apparently formed SiO2 scale in H2O/O2/argon mixtures acts as an effective oxidation barrier.",

keywords = "C/SiC, Composites, CVD, Oxidation, SiC, Water vapor",

author = "Xiaowei Yin and Laifei Cheng and Litong Zhang and Yongdong Xu",

year = "2003",

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TY - JOUR

T1 - Oxidation behaviors of C/SiC in the oxidizing environments containing water vapor

AU - Yin, Xiaowei

AU - Cheng, Laifei

AU - Zhang, Litong

AU - Xu, Yongdong

PY - 2003/5/15

Y1 - 2003/5/15

N2 - Compared with those in oxygen/argon mixtures, the oxidation behaviors of C/SiC materials are studied in H2O/argon gas mixtures and in H2O/O2/argon mixtures, respectively. By measuring the thickness of the SiO2 scale formed on the SiC coating, the oxidation parabolic rate constants and the activation energies of CVD SiC are calculated. Experimental results point out that the oxidation of the SiC matrix is strongly enhanced in the environments containing water vapor. By microscopy observations and XRD analysis, the stresses in the silica scale are studied. By thermo-gravity analysis, the oxidation kinetics of C/SiC materials is investigated. The weight loss of C/SiC materials in H2O/O2/argon mixtures is smaller than in dry oxygen with the same oxygen partial pressure, because the apparently formed SiO2 scale in H2O/O2/argon mixtures acts as an effective oxidation barrier.

AB - Compared with those in oxygen/argon mixtures, the oxidation behaviors of C/SiC materials are studied in H2O/argon gas mixtures and in H2O/O2/argon mixtures, respectively. By measuring the thickness of the SiO2 scale formed on the SiC coating, the oxidation parabolic rate constants and the activation energies of CVD SiC are calculated. Experimental results point out that the oxidation of the SiC matrix is strongly enhanced in the environments containing water vapor. By microscopy observations and XRD analysis, the stresses in the silica scale are studied. By thermo-gravity analysis, the oxidation kinetics of C/SiC materials is investigated. The weight loss of C/SiC materials in H2O/O2/argon mixtures is smaller than in dry oxygen with the same oxygen partial pressure, because the apparently formed SiO2 scale in H2O/O2/argon mixtures acts as an effective oxidation barrier.

KW - C/SiC

KW - Composites

KW - CVD

KW - Oxidation

KW - SiC

KW - Water vapor

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U2 - 10.1016/S0921-5093(02)00644-5

DO - 10.1016/S0921-5093(02)00644-5

M3 - 文章

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SN - 0921-5093

VL - 348

SP - 47

EP - 53

JO - Materials Science and Engineering: A

JF - Materials Science and Engineering: A

IS - 1-2

ER -

Oxidation behaviors of C/SiC in the oxidizing environments containing water vapor

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