Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation

Kun Cao; Wanqi Jie; Gangqiang Zha; Jiangpeng Dong; Yang Li; Sihong Wu; Yawei Wang; Hao Zhang; Yun Lin

doi:10.1016/j.apsusc.2019.144431

Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation

Kun Cao, Wanqi Jie, Gangqiang Zha, Jiangpeng Dong, Yang Li, Sihong Wu, Yawei Wang, Hao Zhang, Yun Lin

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

The origin and evolution of threading dislocations (TDs) in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation (CSS) were experimentally investigated. The dislocation formed at the initial growth stage was observed and analyzed by the plan-view (scanning) transmission electron microscopy (STEM). The thickness-dependent migration and recombination of TDs along the growth direction were revealed by the dislocation etch pit. The origin of TDs is mainly related to the mismatch of growth domains. Strong lateral migration of dislocation in film can be explained by epitaxial lateral overgrowth (ELO) process. The blocking effect on TD movement by growth pit which is related to antiphase boundary (APB) is the primary cause of epilayer quality deterioration.

源语言	英语
文章编号	144431
期刊	Applied Surface Science
卷	504
DOI	https://doi.org/10.1016/j.apsusc.2019.144431
出版状态	已出版 - 28 2月 2020

访问文件

10.1016/j.apsusc.2019.144431

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{aaa7377f14db49d89a65a42d3037bbd8,

title = "Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation",

abstract = "The origin and evolution of threading dislocations (TDs) in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation (CSS) were experimentally investigated. The dislocation formed at the initial growth stage was observed and analyzed by the plan-view (scanning) transmission electron microscopy (STEM). The thickness-dependent migration and recombination of TDs along the growth direction were revealed by the dislocation etch pit. The origin of TDs is mainly related to the mismatch of growth domains. Strong lateral migration of dislocation in film can be explained by epitaxial lateral overgrowth (ELO) process. The blocking effect on TD movement by growth pit which is related to antiphase boundary (APB) is the primary cause of epilayer quality deterioration.",

keywords = "Antiphase boundary, CdZnTe epilayer, Close spaced sublimation, Evolution, Origin, Threading dislocation",

author = "Kun Cao and Wanqi Jie and Gangqiang Zha and Jiangpeng Dong and Yang Li and Sihong Wu and Yawei Wang and Hao Zhang and Yun Lin",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2020",

month = feb,

day = "28",

doi = "10.1016/j.apsusc.2019.144431",

language = "英语",

volume = "504",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation

AU - Cao, Kun

AU - Jie, Wanqi

AU - Zha, Gangqiang

AU - Dong, Jiangpeng

AU - Li, Yang

AU - Wu, Sihong

AU - Wang, Yawei

AU - Zhang, Hao

AU - Lin, Yun

PY - 2020/2/28

Y1 - 2020/2/28

N2 - The origin and evolution of threading dislocations (TDs) in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation (CSS) were experimentally investigated. The dislocation formed at the initial growth stage was observed and analyzed by the plan-view (scanning) transmission electron microscopy (STEM). The thickness-dependent migration and recombination of TDs along the growth direction were revealed by the dislocation etch pit. The origin of TDs is mainly related to the mismatch of growth domains. Strong lateral migration of dislocation in film can be explained by epitaxial lateral overgrowth (ELO) process. The blocking effect on TD movement by growth pit which is related to antiphase boundary (APB) is the primary cause of epilayer quality deterioration.

AB - The origin and evolution of threading dislocations (TDs) in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation (CSS) were experimentally investigated. The dislocation formed at the initial growth stage was observed and analyzed by the plan-view (scanning) transmission electron microscopy (STEM). The thickness-dependent migration and recombination of TDs along the growth direction were revealed by the dislocation etch pit. The origin of TDs is mainly related to the mismatch of growth domains. Strong lateral migration of dislocation in film can be explained by epitaxial lateral overgrowth (ELO) process. The blocking effect on TD movement by growth pit which is related to antiphase boundary (APB) is the primary cause of epilayer quality deterioration.

KW - Antiphase boundary

KW - CdZnTe epilayer

KW - Close spaced sublimation

KW - Evolution

KW - Origin

KW - Threading dislocation

UR - http://www.scopus.com/inward/record.url?scp=85075479070&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2019.144431

DO - 10.1016/j.apsusc.2019.144431

M3 - 文章

AN - SCOPUS:85075479070

SN - 0169-4332

VL - 504

JO - Applied Surface Science

JF - Applied Surface Science

M1 - 144431

ER -

Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation

摘要

访问文件

其它文件与链接

指纹

引用此

Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation