Optical floating zone crystal growth of Tb₂PdSi₃ and its magnetic property

Tb₂PdSi₃ single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm/h. Congruent melting behavior of this compound was proved at a liquidus temperature of about 1700°C which was corresponding to the DTA value. Platelet-like precipitates of TbSi phase was not found in the crystal matrix which was unavoidable in other R₂PdSi₃ compound single crystal growth. It may be caused by the slightly Tb-enrichment in the crystal matrix. AlB₂ type crystal structure and high crystal perfection were proved by X-ray Laue back scattering images. The χ(T) curves of both a and c axis were measured.