On-chip graphene optoelectronic devices for high-speed modulation and photodetection

Ren Jye Shiue, Xuetao Gan, Dirk Englund

科研成果: 书/报告/会议事项章节会议稿件同行评审

2 引用 (Scopus)

摘要

There has been a rapidly growing interest in graphene-based optoelectronics. This exceptional material exhibits broadband optical response, ultrahigh carrier mobility and more importantly, potential compatibility with silicon complementary metal-oxide semiconductor (CMOS) technology. Here we present our recent works that integrate graphene with silicon channel waveguides and photonic crystal cavities. By coupling graphene to an optical cavity, we demonstrated an efficient electro-optic modulator that features a modulation depth of 10 dB and a switching energy of 300 fJ. Several high-speed modulators are also tested, showing a speed up to 0.57 GHz. In addition, we implemented a graphene photodetector on a silicon waveguide. The 53-μm-long graphene channel couples to the evanescent field of the waveguide mode, resulting in more than 60% absorption of the input light. We demonstrated a responsivity of 0.108 A/W in our photodetector. A data transmission of 12 Gbps and response time in excess of 20 GHz are also achieved. These results show the feasibility of graphene as a building block for silicon photonic integrated circuits. In particular, on-chip graphene active devices such as modulators and photodetectors are promising for their broadband response, high-speed operation, low power consumption and ease-to-fabrication.

源语言英语
主期刊名Photonic and Phononic Properties of Engineered Nanostructures IV
出版商SPIE
ISBN(印刷版)9780819499073
DOI
出版状态已出版 - 2014
已对外发布
活动Photonic and Phononic Properties of Engineered Nanostructures IV - San Francisco, CA, 美国
期限: 3 2月 20146 2月 2014

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
8994
ISSN(印刷版)0277-786X
ISSN(电子版)1996-756X

会议

会议Photonic and Phononic Properties of Engineered Nanostructures IV
国家/地区美国
San Francisco, CA
时期3/02/146/02/14

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