摘要
This article proposes a broadband high-efficiency parallel-circuit (PC) class-EF power amplifier (PA) along with a quarter-wavelength stub for the first time. By adding a reactive element X , the design space is expanded so that the impedance terminations of the fundamental and harmonics are no longer fixed points. Based on the broadband capability of the proposed structure, using a GaN HEMT transistor, a proof-of-concept circuit implemented with the Chebyshev impedance transformation network is designed and fabricated. Experimental results demonstrate a high-efficiency broadband PA operating from 2.6-3.9 GHz, with the average efficiency of 71.5%, the measured output power ( Pout ) of 38.8-40.9 dBm and the power gain of 8.5-10.6 dB.
源语言 | 英语 |
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页(从-至) | 3465-3475 |
页数 | 11 |
期刊 | IEEE Transactions on Circuits and Systems I: Regular Papers |
卷 | 69 |
期 | 9 |
DOI | |
出版状态 | 已出版 - 1 9月 2022 |