N-type Bi-doped SnSe Thermoelectric Nanomaterials Synthesized by a Facile Solution Method

Xiaofang Li, Chen Chen, Wenhua Xue, Shan Li, Feng Cao, Yuexing Chen, Jiaqing He, Jiehe Sui, Xingjun Liu, Yumei Wang, Qian Zhang

科研成果: 期刊稿件文章同行评审

34 引用 (Scopus)

摘要

An n-type Bi-doped SnSe was synthesized by a facile solution method followed by spark plasma sintering. We used bismuth(III) 2-ethyhexanoate as a cationic dopant precursor, which can absorb on the powder surface and then diffuse into the lattice to realize the substitution of Sn by Bi. A strip structure with low-angle boundary was constructed for effective phonon scattering. With increasing content of Bi, the carrier concentration decreased from 1.35 × 1019 cm-3 (p-type) in undoped SnSe to 4.7 × 1014 cm-3 (n-type) in Sn0.99Bi0.01Se and then increased to 1.3 × 1015 cm-3 (n-type) in Sn0.97Bi0.03Se. The Seebeck coefficient changed from positive to negative and presented n-type conducting behavior in the whole measured temperature range from 300 to 773 K, reaching a maximum absolute value of ∼900 μV K-1 at room temperature and ∼300 μV K-1 at 773 K. Considering the rich variety of metal 2-ethylhexanoates, higher thermoelectric performance is expected by different cationic doping in solution-synthesized nanomaterials.

源语言英语
页(从-至)13800-13808
页数9
期刊Inorganic Chemistry
57
21
DOI
出版状态已出版 - 5 11月 2018
已对外发布

指纹

探究 'N-type Bi-doped SnSe Thermoelectric Nanomaterials Synthesized by a Facile Solution Method' 的科研主题。它们共同构成独一无二的指纹。

引用此