TY - JOUR
T1 - Multiple Modes Response of Co-Aperture 2D/1D Phototransistors
AU - Liu, Changlong
AU - Zhang, Xutao
AU - Guo, Feng
AU - Zhang, Shi
AU - Wang, Jian
AU - Yang, Lijie
AU - Guo, Cheng
AU - Li, Guanhai
AU - Xu, Zhiwei
AU - Wang, Lin
AU - Gan, Xuetao
AU - Chen, Pingping
AU - Chen, Xiaoshuang
AU - Lu, Wei
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/4/22
Y1 - 2022/4/22
N2 - Strict requirements for target detection and identification of the complex background have increased because a single detection method is susceptible to environmental factors. The abilities to use terahertz imaging systems with high photoresponsivity and polarization sensitivity are of central importance to practical photodetectors. The present technology for high-sensitivity, polarization THz detectors integrated into a compact, common aperture (co-aperture) system remains largely unexplored challenges. By exploiting the inherent features of graphene/Bi2Te3 Dirac material and InAs nanowire, the plasma-wave and thermoelectric co-aperture phototransistors with a selective, synchronous, and controllable operating modes are devised in the same field of view, which provide remarkable efficiencies for THz-light harvesting on-chip. The achieved selective detection, better than that of single nanowire phototransistor, exhibits excellent sensitivity of 18.5 mA W−1 (12 V W−1) in graphene/Bi2Te3 channel and 3.5 mA W−1 (400 V W−1) in InAs nanowire channel, corresponding to the noise equivalent power of less than 0.1 nW/Hz0.5. The results are exploited to highlight a novel strategy for the realization of efficient co-aperture phototransistors toward tunable, multiple modes, polarization THz detection by combining with in situ integration advantages of various materials, compatibility mechanisms, integration structures with metamaterials.
AB - Strict requirements for target detection and identification of the complex background have increased because a single detection method is susceptible to environmental factors. The abilities to use terahertz imaging systems with high photoresponsivity and polarization sensitivity are of central importance to practical photodetectors. The present technology for high-sensitivity, polarization THz detectors integrated into a compact, common aperture (co-aperture) system remains largely unexplored challenges. By exploiting the inherent features of graphene/Bi2Te3 Dirac material and InAs nanowire, the plasma-wave and thermoelectric co-aperture phototransistors with a selective, synchronous, and controllable operating modes are devised in the same field of view, which provide remarkable efficiencies for THz-light harvesting on-chip. The achieved selective detection, better than that of single nanowire phototransistor, exhibits excellent sensitivity of 18.5 mA W−1 (12 V W−1) in graphene/Bi2Te3 channel and 3.5 mA W−1 (400 V W−1) in InAs nanowire channel, corresponding to the noise equivalent power of less than 0.1 nW/Hz0.5. The results are exploited to highlight a novel strategy for the realization of efficient co-aperture phototransistors toward tunable, multiple modes, polarization THz detection by combining with in situ integration advantages of various materials, compatibility mechanisms, integration structures with metamaterials.
KW - common aperture
KW - graphene/Bi Te
KW - inAs nanowire
KW - phototransistors
KW - terahertz
UR - http://www.scopus.com/inward/record.url?scp=85126897893&partnerID=8YFLogxK
U2 - 10.1002/admi.202102568
DO - 10.1002/admi.202102568
M3 - 文章
AN - SCOPUS:85126897893
SN - 2196-7350
VL - 9
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 12
M1 - 2102568
ER -