Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere

Y. Xu, L. Cheng, L. Zhang, W. Zhou

科研成果: 期刊稿件文章同行评审

34 引用 (Scopus)

摘要

With the method of phenomenology, a supersaturation-condensation-fusion (SCF) mechanism is proposed to describe the growth of chemical vapor deposition silicon carbide under normal atmosphere. The structure has been characterized by scanning electron microscopy and transmission electron microscopy. Morphology characterization of deposited crystallites and silicon carbide aggregates have been explained in terms of SCF mechanism. Auger spectra analysis revealed that there were Si, C, S, Cl, and O on the surface of the deposit.

源语言英语
页(从-至)551-555
页数5
期刊Journal of Materials Science
34
3
DOI
出版状态已出版 - 1999

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