TY - JOUR
T1 - Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere
AU - Xu, Y.
AU - Cheng, L.
AU - Zhang, L.
AU - Zhou, W.
PY - 1999
Y1 - 1999
N2 - With the method of phenomenology, a supersaturation-condensation-fusion (SCF) mechanism is proposed to describe the growth of chemical vapor deposition silicon carbide under normal atmosphere. The structure has been characterized by scanning electron microscopy and transmission electron microscopy. Morphology characterization of deposited crystallites and silicon carbide aggregates have been explained in terms of SCF mechanism. Auger spectra analysis revealed that there were Si, C, S, Cl, and O on the surface of the deposit.
AB - With the method of phenomenology, a supersaturation-condensation-fusion (SCF) mechanism is proposed to describe the growth of chemical vapor deposition silicon carbide under normal atmosphere. The structure has been characterized by scanning electron microscopy and transmission electron microscopy. Morphology characterization of deposited crystallites and silicon carbide aggregates have been explained in terms of SCF mechanism. Auger spectra analysis revealed that there were Si, C, S, Cl, and O on the surface of the deposit.
UR - http://www.scopus.com/inward/record.url?scp=0032669906&partnerID=8YFLogxK
U2 - 10.1023/A:1004546712932
DO - 10.1023/A:1004546712932
M3 - 文章
AN - SCOPUS:0032669906
SN - 0022-2461
VL - 34
SP - 551
EP - 555
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 3
ER -