Microwave dielectric properties of Ti₃SiC₂ powders synthesized by solid state reaction

Ti₃SiC₂ powders were synthesized by the solid state reaction in a vacuum using Ti/Si/TiC mixture powders as the starting materials. X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy were utilized in analyzing phase, morphology, and chemical composition of the prepared powders, respectively. It was found that the powder synthesized at 1350 C had the higher purity of Ti₃SiC₂. The dielectric permittivities of Ti₃SiC₂ samples were determined in the frequency range of 8.2-12.4 GHz. Results showed that the sample with higher purity of Ti₃SiC₂ had the greater real part of complex permittivity ε′ and dielectric loss tan δ, indicating a good application prospect in microwave absorbing materials. The mechanism of microwave dielectric loss for Ti₃SiC₂ was discussed.