摘要
Radar wave absorbing material (RAM) SiC(N)/LAS was prepared from nano SiC(N) absorber and LAS glass powder, The effect of nano SiC(N) absorber contents, hot-pressing temperatures, and the carbon-rich layer at the absorber/matrix interface on microwave permittivity and microwave absorbing ability of the RAM were studied. The results show that increasing the hot-pressing temperature over 1080°C remarkably increases the RAM's permittivity while the densities of the RAM keep nearly the same. A great difference between the measured and expected permittivity exists. The discrepancy of permittivity is related to the carbon-rich layer at the absorber/matrix interface that has a high permittivity. The activity and high specific surface of the nanometer SiC(N) facilitate the interface formation and intensify the RAM's wave absorbing ability.
源语言 | 英语 |
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页(从-至) | 580-584 |
页数 | 5 |
期刊 | Wuji Cailiao Xuebao/Journal of Inorganic Materials |
卷 | 18 |
期 | 3 |
出版状态 | 已出版 - 5月 2003 |