Microstructure and dielectric properties of (K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 lead-free ceramics for high temperature capacitor applications

Hualei Cheng; Wancheng Zhou; Hongliang Du; Fa Luo; Wenrui Wang

doi:10.1007/s10854-015-3597-8

Microstructure and dielectric properties of (K_0.5Na_0.5)NbO₃–Bi(Zn_2/3Nb_1/3)O₃ − xmol%CeO₂ lead-free ceramics for high temperature capacitor applications

Hualei Cheng, Wancheng Zhou, Hongliang Du, Fa Luo, Wenrui Wang

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

12 引用（Scopus）

摘要

(K_0.5Na_0.5)NbO₃–Bi(Zn_2/3Nb_1/3)O₃ − xmol%CeO₂ [0.97KNN–0.03BZN − xCeO₂] lead-free ceramics were synthesized and the phase structure, microstructure and dielectric properties were investigated. Dielectric studies reveal that the 0.97KNN–0.03BZN − 1.0CeO₂ ceramics show excellent dielectric properties at a broad usage temperature range (150–350 °C): the dielectric permittivity is near 1900 (at 10 kHz) with the capacitance variation (ΔC/C_150 °C) no more than ±10 %; the temperature coefficient of permittivity (TC_ε) is as low as −162 ppm/°C; the corresponding dielectric loss is less than 2.5 %. These results indicate that the 0.97KNN–0.03BZN − 1.0CeO₂ ceramics are promising candidates for high temperature multilayer ceramic capacitor applications.

源语言	英语
页（从-至）	9097-9106
页数	10
期刊	Journal of Materials Science: Materials in Electronics
卷	26
期	11
DOI	https://doi.org/10.1007/s10854-015-3597-8
出版状态	已出版 - 1 11月 2015

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10.1007/s10854-015-3597-8

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title = "Microstructure and dielectric properties of (K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 lead-free ceramics for high temperature capacitor applications",

abstract = "(K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 [0.97KNN–0.03BZN − xCeO2] lead-free ceramics were synthesized and the phase structure, microstructure and dielectric properties were investigated. Dielectric studies reveal that the 0.97KNN–0.03BZN − 1.0CeO2 ceramics show excellent dielectric properties at a broad usage temperature range (150–350 °C): the dielectric permittivity is near 1900 (at 10 kHz) with the capacitance variation (ΔC/C150 °C) no more than ±10 %; the temperature coefficient of permittivity (TCε) is as low as −162 ppm/°C; the corresponding dielectric loss is less than 2.5 %. These results indicate that the 0.97KNN–0.03BZN − 1.0CeO2 ceramics are promising candidates for high temperature multilayer ceramic capacitor applications.",

author = "Hualei Cheng and Wancheng Zhou and Hongliang Du and Fa Luo and Wenrui Wang",

note = "Publisher Copyright: {\textcopyright} 2015, Springer Science+Business Media New York.",

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Microstructure and dielectric properties of (K_0.5Na_0.5)NbO₃–Bi(Zn_2/3Nb_1/3)O₃ − xmol%CeO₂ lead-free ceramics for high temperature capacitor applications. / Cheng, Hualei; Zhou, Wancheng; Du, Hongliang 等.
在: Journal of Materials Science: Materials in Electronics, 卷 26, 号码 11, 01.11.2015, 页码 9097-9106.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - Microstructure and dielectric properties of (K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 lead-free ceramics for high temperature capacitor applications

AU - Cheng, Hualei

AU - Zhou, Wancheng

AU - Du, Hongliang

AU - Luo, Fa

AU - Wang, Wenrui

PY - 2015/11/1

Y1 - 2015/11/1

N2 - (K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 [0.97KNN–0.03BZN − xCeO2] lead-free ceramics were synthesized and the phase structure, microstructure and dielectric properties were investigated. Dielectric studies reveal that the 0.97KNN–0.03BZN − 1.0CeO2 ceramics show excellent dielectric properties at a broad usage temperature range (150–350 °C): the dielectric permittivity is near 1900 (at 10 kHz) with the capacitance variation (ΔC/C150 °C) no more than ±10 %; the temperature coefficient of permittivity (TCε) is as low as −162 ppm/°C; the corresponding dielectric loss is less than 2.5 %. These results indicate that the 0.97KNN–0.03BZN − 1.0CeO2 ceramics are promising candidates for high temperature multilayer ceramic capacitor applications.

AB - (K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 [0.97KNN–0.03BZN − xCeO2] lead-free ceramics were synthesized and the phase structure, microstructure and dielectric properties were investigated. Dielectric studies reveal that the 0.97KNN–0.03BZN − 1.0CeO2 ceramics show excellent dielectric properties at a broad usage temperature range (150–350 °C): the dielectric permittivity is near 1900 (at 10 kHz) with the capacitance variation (ΔC/C150 °C) no more than ±10 %; the temperature coefficient of permittivity (TCε) is as low as −162 ppm/°C; the corresponding dielectric loss is less than 2.5 %. These results indicate that the 0.97KNN–0.03BZN − 1.0CeO2 ceramics are promising candidates for high temperature multilayer ceramic capacitor applications.

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DO - 10.1007/s10854-015-3597-8

M3 - 文章

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SN - 0957-4522

VL - 26

SP - 9097

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

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Microstructure and dielectric properties of (K0.5Na0.5)NbO3–Bi(Zn2/3Nb1/3)O3 − xmol%CeO2 lead-free ceramics for high temperature capacitor applications

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Microstructure and dielectric properties of (K_0.5Na_0.5)NbO₃–Bi(Zn_2/3Nb_1/3)O₃ − xmol%CeO₂ lead-free ceramics for high temperature capacitor applications