Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer

Gang Qiang Zha; Wan Qi Jie; Qiang Li; Yong Qin Liu

Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer

Gang Qiang Zha, Wan Qi Jie, Qiang Li, Yong Qin Liu

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

Mechanical polishing technology of CZT wafers has been studied experimentally. After fractional polishing with SiO₂ and MgO, the surface of CZT wafer was bright and smooth, without scratch in the view of optical microscope. The surface roughness was measured by New View 5000^™ to be about 8.752 nm. FWHM of X-ray rocking curve was adapted to characterize the surface damage. By comparing the weight lose and FWHM after different etching time, the thickness of the surface damage layer caused by mechanical polishing was determined to be about 26.7 μm.

源语言	英语
页（从-至）	120-122
页数	3
期刊	Gongneng Cailiao/Journal of Functional Materials
卷	37
期	1
出版状态	已出版 - 1月 2006

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title = "Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer",

abstract = "Mechanical polishing technology of CZT wafers has been studied experimentally. After fractional polishing with SiO2 and MgO, the surface of CZT wafer was bright and smooth, without scratch in the view of optical microscope. The surface roughness was measured by New View 5000{\texttrademark} to be about 8.752 nm. FWHM of X-ray rocking curve was adapted to characterize the surface damage. By comparing the weight lose and FWHM after different etching time, the thickness of the surface damage layer caused by mechanical polishing was determined to be about 26.7 μm.",

keywords = "CdZnTe, Mechanical polishing, Surface damage layer, X-ray rocking curve",

author = "Zha, {Gang Qiang} and Jie, {Wan Qi} and Qiang Li and Liu, {Yong Qin}",

year = "2006",

month = jan,

language = "英语",

volume = "37",

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T1 - Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer

AU - Zha, Gang Qiang

AU - Jie, Wan Qi

AU - Li, Qiang

AU - Liu, Yong Qin

PY - 2006/1

Y1 - 2006/1

N2 - Mechanical polishing technology of CZT wafers has been studied experimentally. After fractional polishing with SiO2 and MgO, the surface of CZT wafer was bright and smooth, without scratch in the view of optical microscope. The surface roughness was measured by New View 5000™ to be about 8.752 nm. FWHM of X-ray rocking curve was adapted to characterize the surface damage. By comparing the weight lose and FWHM after different etching time, the thickness of the surface damage layer caused by mechanical polishing was determined to be about 26.7 μm.

AB - Mechanical polishing technology of CZT wafers has been studied experimentally. After fractional polishing with SiO2 and MgO, the surface of CZT wafer was bright and smooth, without scratch in the view of optical microscope. The surface roughness was measured by New View 5000™ to be about 8.752 nm. FWHM of X-ray rocking curve was adapted to characterize the surface damage. By comparing the weight lose and FWHM after different etching time, the thickness of the surface damage layer caused by mechanical polishing was determined to be about 26.7 μm.

KW - CdZnTe

KW - Mechanical polishing

KW - Surface damage layer

KW - X-ray rocking curve

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M3 - 文章

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SN - 1001-9731

VL - 37

SP - 120

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JO - Gongneng Cailiao/Journal of Functional Materials

JF - Gongneng Cailiao/Journal of Functional Materials

IS - 1

ER -

Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer

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