摘要
Luminescence centers were created in the CsI host crystals by annealing of Pb-doped crystals at 400°C in air. It was found that the excitation spectra of these luminescence centers are coincided well with the excitation absorption of a series of compounds in the Cs-Pb-I system, which indicates that they are attributed to the creation of CsPbI3, CsPbI6 and other aggregates in the annealing process. The emission spectra of Pb:CsI crystals were measured in the 10-30K temperature range by 360nm and 410nm excitation respectively. The relative intensities of emission bands depend strongly on annealing time, which implies that the creation and transformation of various Pb-based aggregates in Pb:CsI crystals tend to active around 400°C annealing temperature.
源语言 | 英语 |
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页(从-至) | 419-420 |
页数 | 2 |
期刊 | Wuji Cailiao Xuebao/Journal of Inorganic Materials |
卷 | 15 |
期 | 3 |
出版状态 | 已出版 - 2000 |