摘要
ZnO thin films with (002) orientation have been deposited on Si(100) substrate by radio frequency (RF) magnetron sputtering technique. The influence of RF power and oxygen ratio on the grain size, the residual stress and optical properties was investigated by X-ray diffraction and transmission spectra. The results show that the crystallization of the ZnO film deposited with sputtering power (100W) and oxygen ratio (60%), can obtain its best c-axis orientation and crystallization and tension stress of the film reaches the lowest.
源语言 | 英语 |
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页(从-至) | 181-185 |
页数 | 5 |
期刊 | Fangzhi Gaoxiao Jichukexue Xuebao |
卷 | 20 |
期 | 2 |
出版状态 | 已出版 - 6月 2007 |
已对外发布 | 是 |