Improvement to the carrier transport properties of CdZnTe detector using sub-band-gap light radiation

Xiangxiang Luo, Gangqiang Zha, Lingyan Xu, Wanqi Jie

科研成果: 期刊稿件文章同行评审

4 引用 (Scopus)

摘要

The effects of sub-band-gap light radiation on the performance of CdZnTe photon-counting X-ray detectors were studied using infrared light with different wavelengths in the region of 980-1550 nm. The performance of the detectors for X-ray detection was improved by the radiation of infrared light with the wavelengths of 1200 nm and 1300 nm. This was because the increase of the electron indirect transition, and the weakening of the built-in electric field induced by the trapped holes, reduced the drift time of the carrier, and increased the charge collection efficiency. To further analyze the intrinsic behavior of the trapped charge, the deep-level defects of CdZnTe crystal were measured by thermally stimulated current spectroscopy (TSC). The deep-level defect indicated by the trap named T4 in TSC spectra with the ionization energy of 0.43 eV should be responsible for the performance deterioration of CdZnTe detectors.

源语言英语
文章编号600
期刊Sensors
19
3
DOI
出版状态已出版 - 1 2月 2019

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