@article{dee6afed620f441598719f3b10ec4e91,
title = "Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration",
abstract = "To adapt a thin and fragile active layer for continued memristor scaling requires alternative damage-free metal-integration strategies. By adopting a van der Waals (vdW) metal-integration approach, this work constructs memristors with vdW contacts between metal and thin native oxide on 2D material SnSe. The “low-energy” vdW-integration process preserves the delicate SnOx and enables reliable memristors with low operation voltage, excellent endurance, and retention. This strategy defines a unique vdW-integration solution for fragile memristive materials.",
keywords = "2D materials, MAP4: Demonstrate, artificial synapse, heterosynaptic plasticity, memristor, memtransistor, neuromorphic electronics, resistive random-access memory (RRAM), van der Waals (vdW) contact",
author = "Jian Guo and Laiyuan Wang and Yuan Liu and Zipeng Zhao and Enbo Zhu and Zhaoyang Lin and Peiqi Wang and Chuancheng Jia and Shengxue Yang and Lee, {Sung Joon} and Wei Huang and Yu Huang and Xiangfeng Duan",
note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Inc.",
year = "2020",
month = apr,
day = "1",
doi = "10.1016/j.matt.2020.01.011",
language = "英语",
volume = "2",
pages = "965--976",
journal = "Matter",
issn = "2590-2393",
publisher = "Cell Press",
number = "4",
}