TY - JOUR
T1 - High thermoelectric performance of Ca3Co4O9 ceramics with duplex structure fabricated via two-step pressureless sintering
AU - Shi, Zongmo
AU - Xu, Jie
AU - Zhu, Jihong
AU - Zhang, Ruizhi
AU - Qin, Mengjie
AU - Lou, Zhihao
AU - Gao, Tong
AU - Reece, Mike
AU - Gao, Feng
N1 - Publisher Copyright:
© 2020, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2020/2/1
Y1 - 2020/2/1
N2 - Two-step pressureless sintering processing was used to prepare high density (97.6%) Ca3Co4O9 thermoelectric ceramics. A duplex structure was observed and channel paths for charge carriers were formed between the grains. Oxygen vacancies were identified by fitting of XPS spectra, and the effect of the oxygen vacancies on thermoelectric properties was investigated. The electrical resistivity of samples decreased from 17.5 to 11.7 mΩ·cm and Seebeck coefficient decreased from 197.5 to 181.4 μV/K at 1073 K with increasing of the first-step sintering temperature. Furthermore, a low thermal conductivity of 0.94 W/(m·K) and the peak ZT of 0.30, which was 1.3 times larger than previous work, were obtained at 1073 K when the first-step sintering temperature was 1373 K.
AB - Two-step pressureless sintering processing was used to prepare high density (97.6%) Ca3Co4O9 thermoelectric ceramics. A duplex structure was observed and channel paths for charge carriers were formed between the grains. Oxygen vacancies were identified by fitting of XPS spectra, and the effect of the oxygen vacancies on thermoelectric properties was investigated. The electrical resistivity of samples decreased from 17.5 to 11.7 mΩ·cm and Seebeck coefficient decreased from 197.5 to 181.4 μV/K at 1073 K with increasing of the first-step sintering temperature. Furthermore, a low thermal conductivity of 0.94 W/(m·K) and the peak ZT of 0.30, which was 1.3 times larger than previous work, were obtained at 1073 K when the first-step sintering temperature was 1373 K.
UR - http://www.scopus.com/inward/record.url?scp=85077566739&partnerID=8YFLogxK
U2 - 10.1007/s10854-019-02838-0
DO - 10.1007/s10854-019-02838-0
M3 - 文章
AN - SCOPUS:85077566739
SN - 0957-4522
VL - 31
SP - 2938
EP - 2948
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 4
ER -