TY - CHAP
T1 - High temperature dielectric and microwave absorption properties of polymer derived sicn ceramic in X band
AU - Li, Quan
AU - Yin, Xiaowei
AU - Kong, Luo
AU - Duan, Wenyan
AU - Zhang, Litong
AU - Cheng, Laifei
N1 - Publisher Copyright:
© 2014 by The American Ceramic Society. All rights reserved.
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Polymer derived SiCN ceramic (PDC-SiCN) composed of SiC and Si3N4 was obtained through pyrolysis of a kind of polysilazane at 1700 °C in N2. The high temperature relative complex permittivities of PDC-SiCN were measured at temperatures from room temperature to 600 °C in the X band (8.2-12.4 GHz). The average real permittivity, imaginary permittivity and loss tangent of PDC-SiCN were 12.2, 5.8 and 0.47 at room temperature, and increased to 14.4, 9.3 and 0.64, respectively. The microwave absorption property of PDC-SiCN was calculated using metal back-panel model. The average reflectivity of sample in X band with sample thickness o f 2.05 mm at room temperature was -12.8 dB, and increased to -8.6 dB at 600 °C. The decrease of the microwave absorption property was attributed to the impedance mismatch between air and sample with the increasing temperatures.
AB - Polymer derived SiCN ceramic (PDC-SiCN) composed of SiC and Si3N4 was obtained through pyrolysis of a kind of polysilazane at 1700 °C in N2. The high temperature relative complex permittivities of PDC-SiCN were measured at temperatures from room temperature to 600 °C in the X band (8.2-12.4 GHz). The average real permittivity, imaginary permittivity and loss tangent of PDC-SiCN were 12.2, 5.8 and 0.47 at room temperature, and increased to 14.4, 9.3 and 0.64, respectively. The microwave absorption property of PDC-SiCN was calculated using metal back-panel model. The average reflectivity of sample in X band with sample thickness o f 2.05 mm at room temperature was -12.8 dB, and increased to -8.6 dB at 600 °C. The decrease of the microwave absorption property was attributed to the impedance mismatch between air and sample with the increasing temperatures.
KW - Band gap semiconductors
KW - Microwave absorption
KW - Pyrolysis
KW - Room temperature
KW - Temperature stability
UR - http://www.scopus.com/inward/record.url?scp=85101894404&partnerID=8YFLogxK
U2 - 10.1002/9781118932995.ch20
DO - 10.1002/9781118932995.ch20
M3 - 章节
AN - SCOPUS:85101894404
SN - 9781118932988
SP - 195
EP - 202
BT - High Temperature Ceramic Matrix Composites 8
PB - wiley
ER -