High-responsivity MoS2hot-electron telecom-band photodetector integrated with microring resonator

Qiao Zhang; Yingke Ji; Siqi Hu; Zhiwen Li; Chen Li; Linpeng Gu; Ruijuan Tian; Jiachen Zhang; Liang Fang; Bijun Zhao; Jianlin Zhao; Xuetao Gan

doi:10.1063/5.0093147

High-responsivity MoS₂hot-electron telecom-band photodetector integrated with microring resonator

Qiao Zhang, Yingke Ji, Siqi Hu, Zhiwen Li, Chen Li, Linpeng Gu, Ruijuan Tian, Jiachen Zhang, Liang Fang, Bijun Zhao, Jianlin Zhao, Xuetao Gan

微电子学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

16 引用（Scopus）

摘要

We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS2 junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS2 Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.

源语言	英语
文章编号	261111
期刊	Applied Physics Letters
卷	120
期	26
DOI	https://doi.org/10.1063/5.0093147
出版状态	已出版 - 27 6月 2022

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10.1063/5.0093147

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title = "High-responsivity MoS2hot-electron telecom-band photodetector integrated with microring resonator",

abstract = "We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS2 junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS2 Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.",

author = "Qiao Zhang and Yingke Ji and Siqi Hu and Zhiwen Li and Chen Li and Linpeng Gu and Ruijuan Tian and Jiachen Zhang and Liang Fang and Bijun Zhao and Jianlin Zhao and Xuetao Gan",

note = "Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = jun,

day = "27",

doi = "10.1063/5.0093147",

language = "英语",

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T1 - High-responsivity MoS2hot-electron telecom-band photodetector integrated with microring resonator

AU - Zhang, Qiao

AU - Ji, Yingke

AU - Hu, Siqi

AU - Li, Zhiwen

AU - Li, Chen

AU - Gu, Linpeng

AU - Tian, Ruijuan

AU - Zhang, Jiachen

AU - Fang, Liang

AU - Zhao, Bijun

AU - Zhao, Jianlin

AU - Gan, Xuetao

PY - 2022/6/27

Y1 - 2022/6/27

N2 - We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS2 junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS2 Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.

AB - We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS2 junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS2 Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.

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U2 - 10.1063/5.0093147

DO - 10.1063/5.0093147

M3 - 文章

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SN - 0003-6951

VL - 120

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

High-responsivity MoS2hot-electron telecom-band photodetector integrated with microring resonator

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High-responsivity MoS₂hot-electron telecom-band photodetector integrated with microring resonator