TY - JOUR
T1 - Hafnium diselenide as a Q-switcher for fiber laser application
AU - Li, Lu
AU - Wang, Yao
AU - Liu, Wenjun
AU - Wang, Huizhong
AU - Wang, Jiang
AU - Ren, Wei
AU - Wang, Yonggang
N1 - Publisher Copyright:
© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
PY - 2019
Y1 - 2019
N2 - Group IVB (Hf) transition metal dichalcogenides (TMDs) have attracted significant interest in photoelectronics due to their predictable superior physical characteristics. In this work, the liquid phase exfoliation method is used to prepare the hafnium diselenide (HfSe2)/polyvinyl alcohol (PVA) saturable absorber (SA) device. The modulation depth (ΔT) is measured to be 6.65%. By using HfSe2/PVA as a Q-switcher, application in the fiber laser with the Q-switching state is demonstrated experimentally. The maximum single pulse energy is 167 nJ is and the slope efficiency is 7.7%. To our best knowledge, this is the first report of the use of HfSe2 as SA for large energy pulse generation. The experimental results prove that, because of its excellent nonlinear optical absorption properties, HfSe2 could promote the development of Hf-based TMDs in the field of ultrafast photonics.
AB - Group IVB (Hf) transition metal dichalcogenides (TMDs) have attracted significant interest in photoelectronics due to their predictable superior physical characteristics. In this work, the liquid phase exfoliation method is used to prepare the hafnium diselenide (HfSe2)/polyvinyl alcohol (PVA) saturable absorber (SA) device. The modulation depth (ΔT) is measured to be 6.65%. By using HfSe2/PVA as a Q-switcher, application in the fiber laser with the Q-switching state is demonstrated experimentally. The maximum single pulse energy is 167 nJ is and the slope efficiency is 7.7%. To our best knowledge, this is the first report of the use of HfSe2 as SA for large energy pulse generation. The experimental results prove that, because of its excellent nonlinear optical absorption properties, HfSe2 could promote the development of Hf-based TMDs in the field of ultrafast photonics.
UR - http://www.scopus.com/inward/record.url?scp=85077151389&partnerID=8YFLogxK
U2 - 10.1364/OME.9.004597
DO - 10.1364/OME.9.004597
M3 - 文章
AN - SCOPUS:85077151389
SN - 2159-3930
VL - 9
SP - 4597
EP - 4604
JO - Optical Materials Express
JF - Optical Materials Express
IS - 12
ER -