Growthand characterization of thick epitaxial CdZnTe film by close space sublimation

Yun Lin, Wan Qi Jie, Gang Qiang Zha, Hao Zhang, Yan Zhou, San Qi Tang, Jia Wei Li

科研成果: 期刊稿件文章同行评审

摘要

The close space sublimation method was used for the epitaxial growth of thick CdZnTe single crystal films for high-energy radiation detectors. High quality CdZnTe epilayers had been successfully grown on a GaAs(100) substrate by CSS method. Crystalline quality of the upper and lower surfaces of the epilayer was assessed from X-ray rocking curve measurements and photoluminescence(PL) spectra after GaAs(100) substrate had been removed by Chemical etching. The density of defects in the epilayer decreases with increasing the thickness, which suggests that the high-quality epilayer can be obtained by increasing the thickness. No Te inclusions in the CdZnTe films grown on GaAs(100) were observed with IR transmission imaging. The film resistivity was in the order of 1010 Ω·cm, which shows a good photoelectric property.

源语言英语
页(从-至)10072-10075
页数4
期刊Gongneng Cailiao/Journal of Functional Materials
45
10
DOI
出版状态已出版 - 30 5月 2014

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