TY - JOUR
T1 - Growth of Cd1-xZnxTe crystals with different x values and their qualities comparison
AU - Li, Guoqiang
AU - Jie, Wanqi
AU - Gu, Zhi
AU - Hua, Hui
PY - 2004/3/1
Y1 - 2004/3/1
N2 - Three Cd1-xZnxTe ingots with x values of 0.10, 0.15, and 0.20 were, respectively, grown by vertical Bridgman method (VBM). Characterization indicated that Cd0.85Zn0.15Te possessed preferable qualities. It had low radial Zn concentration deviation, low densities of dislocation and Te precipitate/inclusion, and high infrared transmission. What is more, Cd0.85Zn0.15Te obtained the highest resistivity, which was about one order higher than both Cd 0.9Zn0.1Te and Cd0.8Zn0.2Te. From the point of the defects and impurities existing in the crystals, as well as the characteristics of the crystal growth by VBM, the opportunity for growth of high-qualities Cd1-xZnxTe was given in this paper.
AB - Three Cd1-xZnxTe ingots with x values of 0.10, 0.15, and 0.20 were, respectively, grown by vertical Bridgman method (VBM). Characterization indicated that Cd0.85Zn0.15Te possessed preferable qualities. It had low radial Zn concentration deviation, low densities of dislocation and Te precipitate/inclusion, and high infrared transmission. What is more, Cd0.85Zn0.15Te obtained the highest resistivity, which was about one order higher than both Cd 0.9Zn0.1Te and Cd0.8Zn0.2Te. From the point of the defects and impurities existing in the crystals, as well as the characteristics of the crystal growth by VBM, the opportunity for growth of high-qualities Cd1-xZnxTe was given in this paper.
KW - A1. Characterization
KW - A1. Segregation
KW - A2. Bridgman technique
KW - B2. Semiconducting II-VI materials
UR - http://www.scopus.com/inward/record.url?scp=1342304973&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2003.11.069
DO - 10.1016/j.jcrysgro.2003.11.069
M3 - 文章
AN - SCOPUS:1342304973
SN - 0022-0248
VL - 263
SP - 332
EP - 337
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -