TY - JOUR
T1 - Growth and properties of Cd0.8Mn0.2Te crystal
AU - Zhang, Jijun
AU - Jie, Wanqi
PY - 2006/6
Y1 - 2006/6
N2 - By optimizing growth parameters, a vertical Bridgman method is successfully used to grow a Cd0.8Mn0.2Te crystal with a size of Φ30 mm × 120 mm. The as-grown crystal is characterized by X-ray powder diffractometer, X-ray double-crystal diffractometer, ultraviolet visible-near infrared spectrum, and IR transmittance and resistivity measurements. The results show that the as-grown crystal has a cubic structure with lattice constant a≈0.6454 nm, and its absorption edge is 720 nm, corresponding to the band gap of 1.722 eV. The results also show high crystallinity, high IR transmittance, and high resistivity. The effect of crystal defects on the IR transmittance and resistivity is discussed.
AB - By optimizing growth parameters, a vertical Bridgman method is successfully used to grow a Cd0.8Mn0.2Te crystal with a size of Φ30 mm × 120 mm. The as-grown crystal is characterized by X-ray powder diffractometer, X-ray double-crystal diffractometer, ultraviolet visible-near infrared spectrum, and IR transmittance and resistivity measurements. The results show that the as-grown crystal has a cubic structure with lattice constant a≈0.6454 nm, and its absorption edge is 720 nm, corresponding to the band gap of 1.722 eV. The results also show high crystallinity, high IR transmittance, and high resistivity. The effect of crystal defects on the IR transmittance and resistivity is discussed.
KW - CdMnTe
KW - Infrared transmittance
KW - Resistivity
KW - Ultraviolet visible-near infrared spectrum
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=33747825707&partnerID=8YFLogxK
M3 - 文章
AN - SCOPUS:33747825707
SN - 0253-4177
VL - 27
SP - 1026
EP - 1029
JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
IS - 6
ER -