TY - JOUR
T1 - Growth and electrical properties of mercury indium telluride single crystals
AU - Wang, Linghang
AU - Dong, Yangchun
AU - Jie, Wanqi
PY - 2007/11/6
Y1 - 2007/11/6
N2 - A novel photoelectronic single crystal, mercury indium telluride (MIT), has been successfully grown by using vertical Bridgman method (VB). The crystallinity, thermal and electrical properties of the MIT crystal were investigated. The results of X-ray rocking curve show that the as-grown MIT crystal has good crystal quality with the FWHM on (3 1 1) face of about 173 in. DSC measurement reveals that the Hg element is easy to solely evaporate from the compound when the temperature is higher than 387.9 °C in the open system. Hall measurements at room temperature show that the resistivity, carrier density and mobility of the MIT crystal were 4.79 × 102 Ω cm, 2.83 × 1013 cm-3 and 4.60 × 102 cm2 V-1 s-1, respectively. The reduction of carrier mobility and the increase of the resistivity are related to the adding of In2Te3 into HgTe, which changes the energy band structure of the crystal.
AB - A novel photoelectronic single crystal, mercury indium telluride (MIT), has been successfully grown by using vertical Bridgman method (VB). The crystallinity, thermal and electrical properties of the MIT crystal were investigated. The results of X-ray rocking curve show that the as-grown MIT crystal has good crystal quality with the FWHM on (3 1 1) face of about 173 in. DSC measurement reveals that the Hg element is easy to solely evaporate from the compound when the temperature is higher than 387.9 °C in the open system. Hall measurements at room temperature show that the resistivity, carrier density and mobility of the MIT crystal were 4.79 × 102 Ω cm, 2.83 × 1013 cm-3 and 4.60 × 102 cm2 V-1 s-1, respectively. The reduction of carrier mobility and the increase of the resistivity are related to the adding of In2Te3 into HgTe, which changes the energy band structure of the crystal.
KW - A. Semiconductors
KW - B. Crystal growth
KW - C. Differential scanning calorimetry (DSC)
KW - C. X-ray diffraction
KW - D. Electrical properties
UR - http://www.scopus.com/inward/record.url?scp=34548395978&partnerID=8YFLogxK
U2 - 10.1016/j.materresbull.2006.12.007
DO - 10.1016/j.materresbull.2006.12.007
M3 - 文章
AN - SCOPUS:34548395978
SN - 0025-5408
VL - 42
SP - 1949
EP - 1954
JO - Materials Research Bulletin
JF - Materials Research Bulletin
IS - 11
ER -