Growth and characterizations of ZnSe single crystal by CVT method directly from elements zinc and selenium

Huanyong Li; Wanqi Jie

doi:10.1117/12.479013

Growth and characterizations of ZnSe single crystal by CVT method directly from elements zinc and selenium

Huanyong Li, Wanqi Jie

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

The ZnSe single crystal with 8×7×0.8mm in size was grown directly from commercial grade high-purity elements, zinc(6N) and selenium(5N), by the CVT method. The chemical transport agent of (NH₄) ₃ZnCl₅ and the growth temperature of 1001-1005°C were employed. The ZnSe crystal shows only (111) face. The FWHM value of double crystal rocking curve of as-grown ZnSe slice was 50s due to the influence of free dendrite crystal microscope on the surface of ZnSe slice, which was in good agreement with the RO-XRD FWHM value of 48sec. The photoluminescence spectrum of the as-grown ZnSe crystal consists of a DAP emission and a broad SA luminescence band. The average etch pit density was about (5̃8)×10⁴cm^-2. The infrared (IR) transmission spectra and ultraviolet absorption measurement indicated that the ZnSe single crystal has good crystalline perfection and high optical quality. All the results confirmed the superiority of this CVT growth method for ZnSe single crystal.

源语言	英语
页（从-至）	101-109
页数	9
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	4970
DOI	https://doi.org/10.1117/12.479013
出版状态	已出版 - 2003
活动	Laser Crystals, Glasses, and Nonlinear Materials Growth and Characterization - San Jose, CA, 美国期限: 28 1月 2003 → 30 1月 2003

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@article{9b0e6bc78d5740edb188ba2071160f0f,

title = "Growth and characterizations of ZnSe single crystal by CVT method directly from elements zinc and selenium",

abstract = "The ZnSe single crystal with 8×7×0.8mm in size was grown directly from commercial grade high-purity elements, zinc(6N) and selenium(5N), by the CVT method. The chemical transport agent of (NH4) 3ZnCl5 and the growth temperature of 1001-1005°C were employed. The ZnSe crystal shows only (111) face. The FWHM value of double crystal rocking curve of as-grown ZnSe slice was 50s due to the influence of free dendrite crystal microscope on the surface of ZnSe slice, which was in good agreement with the RO-XRD FWHM value of 48sec. The photoluminescence spectrum of the as-grown ZnSe crystal consists of a DAP emission and a broad SA luminescence band. The average etch pit density was about ({\~5}8)×104cm-2. The infrared (IR) transmission spectra and ultraviolet absorption measurement indicated that the ZnSe single crystal has good crystalline perfection and high optical quality. All the results confirmed the superiority of this CVT growth method for ZnSe single crystal.",

keywords = "CVT, The transport agent, Zn(NH)Cl, ZnSe single crystals",

author = "Huanyong Li and Wanqi Jie",

year = "2003",

doi = "10.1117/12.479013",

language = "英语",

volume = "4970",

pages = "101--109",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Laser Crystals, Glasses, and Nonlinear Materials Growth and Characterization ; Conference date: 28-01-2003 Through 30-01-2003",

}

TY - JOUR

T1 - Growth and characterizations of ZnSe single crystal by CVT method directly from elements zinc and selenium

AU - Li, Huanyong

AU - Jie, Wanqi

PY - 2003

Y1 - 2003

N2 - The ZnSe single crystal with 8×7×0.8mm in size was grown directly from commercial grade high-purity elements, zinc(6N) and selenium(5N), by the CVT method. The chemical transport agent of (NH4) 3ZnCl5 and the growth temperature of 1001-1005°C were employed. The ZnSe crystal shows only (111) face. The FWHM value of double crystal rocking curve of as-grown ZnSe slice was 50s due to the influence of free dendrite crystal microscope on the surface of ZnSe slice, which was in good agreement with the RO-XRD FWHM value of 48sec. The photoluminescence spectrum of the as-grown ZnSe crystal consists of a DAP emission and a broad SA luminescence band. The average etch pit density was about (5̃8)×104cm-2. The infrared (IR) transmission spectra and ultraviolet absorption measurement indicated that the ZnSe single crystal has good crystalline perfection and high optical quality. All the results confirmed the superiority of this CVT growth method for ZnSe single crystal.

AB - The ZnSe single crystal with 8×7×0.8mm in size was grown directly from commercial grade high-purity elements, zinc(6N) and selenium(5N), by the CVT method. The chemical transport agent of (NH4) 3ZnCl5 and the growth temperature of 1001-1005°C were employed. The ZnSe crystal shows only (111) face. The FWHM value of double crystal rocking curve of as-grown ZnSe slice was 50s due to the influence of free dendrite crystal microscope on the surface of ZnSe slice, which was in good agreement with the RO-XRD FWHM value of 48sec. The photoluminescence spectrum of the as-grown ZnSe crystal consists of a DAP emission and a broad SA luminescence band. The average etch pit density was about (5̃8)×104cm-2. The infrared (IR) transmission spectra and ultraviolet absorption measurement indicated that the ZnSe single crystal has good crystalline perfection and high optical quality. All the results confirmed the superiority of this CVT growth method for ZnSe single crystal.

KW - CVT

KW - The transport agent

KW - Zn(NH)Cl

KW - ZnSe single crystals

UR - http://www.scopus.com/inward/record.url?scp=0242662557&partnerID=8YFLogxK

U2 - 10.1117/12.479013

DO - 10.1117/12.479013

M3 - 会议文章

AN - SCOPUS:0242662557

SN - 0277-786X

VL - 4970

SP - 101

EP - 109

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Laser Crystals, Glasses, and Nonlinear Materials Growth and Characterization

Y2 - 28 January 2003 through 30 January 2003

ER -

Growth and characterizations of ZnSe single crystal by CVT method directly from elements zinc and selenium

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