Growth and characterizations of ZnSe single crystal by CVT method directly from elements zinc and selenium

Huanyong Li, Wanqi Jie

科研成果: 期刊稿件会议文章同行评审

摘要

The ZnSe single crystal with 8×7×0.8mm in size was grown directly from commercial grade high-purity elements, zinc(6N) and selenium(5N), by the CVT method. The chemical transport agent of (NH4) 3ZnCl5 and the growth temperature of 1001-1005°C were employed. The ZnSe crystal shows only (111) face. The FWHM value of double crystal rocking curve of as-grown ZnSe slice was 50s due to the influence of free dendrite crystal microscope on the surface of ZnSe slice, which was in good agreement with the RO-XRD FWHM value of 48sec. The photoluminescence spectrum of the as-grown ZnSe crystal consists of a DAP emission and a broad SA luminescence band. The average etch pit density was about (5̃8)×104cm-2. The infrared (IR) transmission spectra and ultraviolet absorption measurement indicated that the ZnSe single crystal has good crystalline perfection and high optical quality. All the results confirmed the superiority of this CVT growth method for ZnSe single crystal.

源语言英语
页(从-至)101-109
页数9
期刊Proceedings of SPIE - The International Society for Optical Engineering
4970
DOI
出版状态已出版 - 2003
活动Laser Crystals, Glasses, and Nonlinear Materials Growth and Characterization - San Jose, CA, 美国
期限: 28 1月 200330 1月 2003

指纹

探究 'Growth and characterizations of ZnSe single crystal by CVT method directly from elements zinc and selenium' 的科研主题。它们共同构成独一无二的指纹。

引用此