摘要
The ZnSe single crystal with 8×7×0.8mm in size was grown directly from commercial grade high-purity elements, zinc(6N) and selenium(5N), by the CVT method. The chemical transport agent of (NH4) 3ZnCl5 and the growth temperature of 1001-1005°C were employed. The ZnSe crystal shows only (111) face. The FWHM value of double crystal rocking curve of as-grown ZnSe slice was 50s due to the influence of free dendrite crystal microscope on the surface of ZnSe slice, which was in good agreement with the RO-XRD FWHM value of 48sec. The photoluminescence spectrum of the as-grown ZnSe crystal consists of a DAP emission and a broad SA luminescence band. The average etch pit density was about (5̃8)×104cm-2. The infrared (IR) transmission spectra and ultraviolet absorption measurement indicated that the ZnSe single crystal has good crystalline perfection and high optical quality. All the results confirmed the superiority of this CVT growth method for ZnSe single crystal.
源语言 | 英语 |
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页(从-至) | 101-109 |
页数 | 9 |
期刊 | Proceedings of SPIE - The International Society for Optical Engineering |
卷 | 4970 |
DOI | |
出版状态 | 已出版 - 2003 |
活动 | Laser Crystals, Glasses, and Nonlinear Materials Growth and Characterization - San Jose, CA, 美国 期限: 28 1月 2003 → 30 1月 2003 |