TY - JOUR
T1 - Fluorinated p-n type copolyfluorene as polymer electret for stable nonvolatile organic transistor memory device
AU - Liu, Bin
AU - Bao, Yan
AU - Ling, Hai feng
AU - Zhu, Wen sai
AU - Gong, Rui jun
AU - Lin, Jin yi
AU - Xie, Ling hai
AU - Yi, Ming dong
AU - Huang, Wei
N1 - Publisher Copyright:
© 2016, Chinese Chemical Society, Institute of Chemistry, Chinese Academy of Sciences and Springer-Verlag Berlin Heidelberg.
PY - 2016/10/1
Y1 - 2016/10/1
N2 - In this study, a kind of fluorinated copolyfluorene, named poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(2,3,5,6-tetrafluoro-1,4-phenylene)] (PODPF-TFP), is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(p-phenylene)] (PODPF-P), deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor (OFET) memory devices are fabricated with PODPF-P/PODPFTFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable Ion/Ioff ratio during a retention time of 104 s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.
AB - In this study, a kind of fluorinated copolyfluorene, named poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(2,3,5,6-tetrafluoro-1,4-phenylene)] (PODPF-TFP), is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(p-phenylene)] (PODPF-P), deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor (OFET) memory devices are fabricated with PODPF-P/PODPFTFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable Ion/Ioff ratio during a retention time of 104 s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.
KW - Direct aromatization
KW - Fluorine atom
KW - p-n copolyfluorenes
KW - Polymer dielectric
KW - Transistor memory
UR - http://www.scopus.com/inward/record.url?scp=84983247304&partnerID=8YFLogxK
U2 - 10.1007/s10118-016-1826-0
DO - 10.1007/s10118-016-1826-0
M3 - 文章
AN - SCOPUS:84983247304
SN - 0256-7679
VL - 34
SP - 1183
EP - 1195
JO - Chinese Journal of Polymer Science (English Edition)
JF - Chinese Journal of Polymer Science (English Edition)
IS - 10
ER -