Finite element simulation of effects of process parameters on deposition rate of SiC by chemical vapor deposition

Guodong Sun, Hejun Li, Shouyang Zhang, Qiangang Fu, Wei Cao, Yanqiong Jiao

科研成果: 书/报告/会议事项章节会议稿件同行评审

3 引用 (Scopus)

摘要

A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L9(3)4 test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H2 and Ar, and that of MTS and mixed gases, were calculated and discussed. The optimal deposition rate of SiC was obtained.

源语言英语
主期刊名Materials Research
编辑Zhongwei Gu, Zhongwei Gu, Zhongwei Gu, Yafang Han, Yafang Han, Yafang Han, Fusheng Pan, Fusheng Pan, Fusheng Pan, Fusheng Pan, Fusheng Pan, Fusheng Pan, Xitao Wang, Xitao Wang, Xitao Wang, Duan Weng, Duan Weng, Duan Weng, Shaoxiong Zhou, Shaoxiong Zhou, Shaoxiong Zhou
出版商Trans Tech Publications Ltd
635-640
页数6
ISBN(印刷版)9780878493401, 9780878493401, 9780878493401
DOI
出版状态已出版 - 2009
活动MRS International Materials Research Conference, IMRC 2008 - Chongqing, 中国
期限: 9 6月 200812 6月 2008

出版系列

姓名Materials Science Forum
610-613
ISSN(印刷版)0255-5476
ISSN(电子版)1662-9752

会议

会议MRS International Materials Research Conference, IMRC 2008
国家/地区中国
Chongqing
时期9/06/0812/06/08

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