@inproceedings{f59a41739ba94172895ca0ddc5291c34,
title = "Finite element simulation of effects of process parameters on deposition rate of SiC by chemical vapor deposition",
abstract = "A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L9(3)4 test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H2 and Ar, and that of MTS and mixed gases, were calculated and discussed. The optimal deposition rate of SiC was obtained.",
keywords = "Chemical vapor deposition, Deposition rate, Finite element simulation, Orthogonal design, SiC coating",
author = "Guodong Sun and Hejun Li and Shouyang Zhang and Qiangang Fu and Wei Cao and Yanqiong Jiao",
year = "2009",
doi = "10.4028/www.scientific.net/MSF.610-613.635",
language = "英语",
isbn = "9780878493401",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "635--640",
editor = "Zhongwei Gu and Zhongwei Gu and Zhongwei Gu and Yafang Han and Yafang Han and Yafang Han and Fusheng Pan and Fusheng Pan and Fusheng Pan and Fusheng Pan and Fusheng Pan and Fusheng Pan and Xitao Wang and Xitao Wang and Xitao Wang and Duan Weng and Duan Weng and Duan Weng and Shaoxiong Zhou and Shaoxiong Zhou and Shaoxiong Zhou",
booktitle = "Materials Research",
note = "MRS International Materials Research Conference, IMRC 2008 ; Conference date: 09-06-2008 Through 12-06-2008",
}