TY - JOUR
T1 - Fabrication and characterization of MEMS piezoelectric synthetic jet actuators with bulk-micromachined PZT thick film
AU - Wang, Shushan
AU - Ma, Binghe
AU - Deng, Jinjun
AU - Qu, Hongdong
AU - Luo, Jian
N1 - Publisher Copyright:
© 2014, Springer-Verlag Berlin Heidelberg.
PY - 2015/5/1
Y1 - 2015/5/1
N2 - In this paper, we have developed a fabrication process for micro synthetic jet actuators (SJA) by bonding a high-quality Pb (Zr,Ti) O3 (PZT) ceramic wafer to a silicon wafer using epoxy resin at low temperature (<150 °C). The bulk-PZT was lapped and polished to be PZT thick film by chemical mechanical polishing (CMP) method, and patterned by wet-etching method. The cavity and orifice of SJA were formed by inductive coupled plasma etching (ICP) method. A MEMS piezoelectric SJA was then completed and characterized, including the performance of the PZT thick film. While the dimension of bonded PZT thick film is about 6,000 × 6,000 × 100 μm, and the dimension of Si membrane is about 1,000 × 1,000 × 20 μm. The experimental results show that the maximum center amplitude of PZT-Si diaphragm is 15.05 μm at Vp-p of 90 V and the resonant frequency of 5 kHz, and the maximum jet velocity is higher than 11 m/s. This novel process has great potential to fabricate MEMS piezoelectric synthetic jet actuators.
AB - In this paper, we have developed a fabrication process for micro synthetic jet actuators (SJA) by bonding a high-quality Pb (Zr,Ti) O3 (PZT) ceramic wafer to a silicon wafer using epoxy resin at low temperature (<150 °C). The bulk-PZT was lapped and polished to be PZT thick film by chemical mechanical polishing (CMP) method, and patterned by wet-etching method. The cavity and orifice of SJA were formed by inductive coupled plasma etching (ICP) method. A MEMS piezoelectric SJA was then completed and characterized, including the performance of the PZT thick film. While the dimension of bonded PZT thick film is about 6,000 × 6,000 × 100 μm, and the dimension of Si membrane is about 1,000 × 1,000 × 20 μm. The experimental results show that the maximum center amplitude of PZT-Si diaphragm is 15.05 μm at Vp-p of 90 V and the resonant frequency of 5 kHz, and the maximum jet velocity is higher than 11 m/s. This novel process has great potential to fabricate MEMS piezoelectric synthetic jet actuators.
UR - http://www.scopus.com/inward/record.url?scp=84928376387&partnerID=8YFLogxK
U2 - 10.1007/s00542-014-2278-5
DO - 10.1007/s00542-014-2278-5
M3 - 文章
AN - SCOPUS:84928376387
SN - 0946-7076
VL - 21
SP - 1053
EP - 1059
JO - Microsystem Technologies
JF - Microsystem Technologies
IS - 5
ER -