TY - JOUR
T1 - Enhancing Carrier Transport Properties of Melt-grown CsPbBr3 Single Crystals by Eliminating Inclusions
AU - Zhang, Peng
AU - Sun, Qihao
AU - Xu, Yadong
AU - Li, Xiang
AU - Liu, Lin
AU - Zhang, Guodong
AU - Tao, Xutang
N1 - Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/4/1
Y1 - 2020/4/1
N2 - All-inorganic perovskite CsPbBr3 has attracted intense attentions due to its inspiring optoelectronic properties and excellent stability. Growing large-size single crystals with high quality is vital both for the intrinsic property investigation and the high-performance device fabrication. Here, large-size CsPbBr3 single crystals (φ 30 mm × 100 mm) were grown by the modified Bridgman method. The surface morphologies of the as-grown CsPbBr3 single-crystal wafers were characterized by SEM, and inclusions with size of 1-2 μm were observed in the first-time grown crystal (labeled as CPB-1). By adopting a slower growth rate (0.2 mm/h) and cooling rate (5 °C/h) than that of CPB-1, the inclusions were eliminated in subsequent growth (labeled as CPB-2). The hole mobility-lifetime products were measured to be 3.92 × 10-3 and 1.46 × 10-2 cm2·V-1 for CPB-1 and CPB-2, respectively. The carrier mobility of CPB-2 was enhanced 1 order of magnitude from 10.1 ± 0.3 cm2·V-1·s-1 (CPB-1) to 101.3 ± 4.2 cm2·V-1·s-1 due to the elimination of inclusions. In addition, CPB-2 exhibited excellent α particles detection ability with the optimal energy resolution of 15.1% at -60 V bias. We provide an effective way to enhance the optoelectronic properties and device performance of melt-grown CsPbBr3 single crystal by preventing the formation of the inclusions.
AB - All-inorganic perovskite CsPbBr3 has attracted intense attentions due to its inspiring optoelectronic properties and excellent stability. Growing large-size single crystals with high quality is vital both for the intrinsic property investigation and the high-performance device fabrication. Here, large-size CsPbBr3 single crystals (φ 30 mm × 100 mm) were grown by the modified Bridgman method. The surface morphologies of the as-grown CsPbBr3 single-crystal wafers were characterized by SEM, and inclusions with size of 1-2 μm were observed in the first-time grown crystal (labeled as CPB-1). By adopting a slower growth rate (0.2 mm/h) and cooling rate (5 °C/h) than that of CPB-1, the inclusions were eliminated in subsequent growth (labeled as CPB-2). The hole mobility-lifetime products were measured to be 3.92 × 10-3 and 1.46 × 10-2 cm2·V-1 for CPB-1 and CPB-2, respectively. The carrier mobility of CPB-2 was enhanced 1 order of magnitude from 10.1 ± 0.3 cm2·V-1·s-1 (CPB-1) to 101.3 ± 4.2 cm2·V-1·s-1 due to the elimination of inclusions. In addition, CPB-2 exhibited excellent α particles detection ability with the optimal energy resolution of 15.1% at -60 V bias. We provide an effective way to enhance the optoelectronic properties and device performance of melt-grown CsPbBr3 single crystal by preventing the formation of the inclusions.
UR - http://www.scopus.com/inward/record.url?scp=85083716850&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.9b01616
DO - 10.1021/acs.cgd.9b01616
M3 - 文章
AN - SCOPUS:85083716850
SN - 1528-7483
VL - 20
SP - 2424
EP - 2431
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 4
ER -