Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes

Mingdong Yi; Litao Zhao; Quli Fan; Xianhai Xia; Wei Ai; Linghai Xie; Xiangmei Liu; Naien Shi; Wenjun Wang; Yanping Wang; Wei Huang

doi:10.1063/1.3639287

Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes

Mingdong Yi, Litao Zhao, Quli Fan, Xianhai Xia, Wei Ai, Linghai Xie, Xiangmei Liu, Naien Shi, Wenjun Wang, Yanping Wang, Wei Huang

科研成果: 期刊稿件 › 文章 › 同行评审

33 引用（Scopus）

摘要

We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 × 10⁴. The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode.

源语言	英语
文章编号	063709
期刊	Journal of Applied Physics
卷	110
期	6
DOI	https://doi.org/10.1063/1.3639287
出版状态	已出版 - 15 9月 2011
已对外发布	是

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abstract = "We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 × 104. The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode.",

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T1 - Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes

AU - Yi, Mingdong

AU - Zhao, Litao

AU - Fan, Quli

AU - Xia, Xianhai

AU - Ai, Wei

AU - Xie, Linghai

AU - Liu, Xiangmei

AU - Shi, Naien

AU - Wang, Wenjun

AU - Wang, Yanping

AU - Huang, Wei

PY - 2011/9/15

Y1 - 2011/9/15

N2 - We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 × 104. The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode.

AB - We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 × 104. The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode.

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VL - 110

JO - Journal of Applied Physics

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Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes

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