TY - JOUR
T1 - Effects of annealing on the properties of CdZnTe epitaxial thick films deposited on p-GaAs using close-spaced sublimation
AU - Li, Yang
AU - Cao, Kun
AU - Zha, Gangqiang
AU - Zhang, Wenyu
AU - Li, Yiwei
AU - Wan, Xin
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2021/11/1
Y1 - 2021/11/1
N2 - CdZnTe epitaxial thick films were deposited on p-type GaAs (001) substrates using close-spaced sublimation. In order to reduce defects in the CdZnTe/p-GaAs films and improve the carrier transport properties, isothermal annealing in a Te2 atmosphere was carried out. After annealing, the resistivity of the CdZnTe/p-GaAs samples increased and the leakage current decreased. In addition, the electron mobility and lifetime product μτe, measured by fitting 241Am@5.49 MeV α particles energy spectra with the Hecht equation using full peak channels under different voltages, were improved. Finally, a 241Am@59.5 keV γ ray energy spectrum of an annealed CdZnTe/p-GaAs sample was acquired. According to the etch pit density and photoluminescence spectrum, it was suggested that isothermal annealing reduced the dislocation density in the as-deposited CdZnTe films and therefore improved the performance of the annealed detectors.
AB - CdZnTe epitaxial thick films were deposited on p-type GaAs (001) substrates using close-spaced sublimation. In order to reduce defects in the CdZnTe/p-GaAs films and improve the carrier transport properties, isothermal annealing in a Te2 atmosphere was carried out. After annealing, the resistivity of the CdZnTe/p-GaAs samples increased and the leakage current decreased. In addition, the electron mobility and lifetime product μτe, measured by fitting 241Am@5.49 MeV α particles energy spectra with the Hecht equation using full peak channels under different voltages, were improved. Finally, a 241Am@59.5 keV γ ray energy spectrum of an annealed CdZnTe/p-GaAs sample was acquired. According to the etch pit density and photoluminescence spectrum, it was suggested that isothermal annealing reduced the dislocation density in the as-deposited CdZnTe films and therefore improved the performance of the annealed detectors.
KW - Annealing
KW - Carrier transport properties
KW - CdZnTe/p-GaAs films
KW - Closed-spaced sublimation (CSS)
KW - Defects
KW - Radiation detectors
UR - http://www.scopus.com/inward/record.url?scp=85114177772&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2021.165752
DO - 10.1016/j.nima.2021.165752
M3 - 文献综述
AN - SCOPUS:85114177772
SN - 0168-9002
VL - 1015
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
M1 - 165752
ER -