Effect of Substrate Bias Voltage on Infrared Characteristics of TiN Films

Linlin Lu; Jie Xu; Yi Liu; Xiaolei Su; Chunfang Ma; Jia Liu; Yongxia Kang

doi:10.1007/s11664-022-09971-3

Effect of Substrate Bias Voltage on Infrared Characteristics of TiN Films

Linlin Lu, Jie Xu, Yi Liu, Xiaolei Su, Chunfang Ma, Jia Liu, Yongxia Kang

Xi'an Polytechnic University

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

As one of the semiconductor films, titanium nitride (TiN) film is a promising candidate for infrared stealth technology. This study investigated the effect of substrate bias voltage on the infrared characteristics of TiN film. TiN films were prepared using direct current reactive magnetron sputtering with various substrate bias voltages ranging from 0 V to −150 V. It was revealed that when substrate bias voltage increased from 0 V to −120 V, the resistivity and infrared emissivity of TiN films increased first and then decreased. As substrate bias voltage continued to increase from −120 V to −150 V, the resistivity and infrared emissivity increased. The infrared emissivity of TiN films showed the lowest value of 0.48 at substrate bias voltage of −120 V.

源语言	英语
页（从-至）	7267-7274
页数	8
期刊	Journal of Electronic Materials
卷	51
期	12
DOI	https://doi.org/10.1007/s11664-022-09971-3
出版状态	已出版 - 12月 2022
已对外发布	是

访问文件

10.1007/s11664-022-09971-3

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{6686018b4d49488584ad119f4ecd3a54,

title = "Effect of Substrate Bias Voltage on Infrared Characteristics of TiN Films",

abstract = "As one of the semiconductor films, titanium nitride (TiN) film is a promising candidate for infrared stealth technology. This study investigated the effect of substrate bias voltage on the infrared characteristics of TiN film. TiN films were prepared using direct current reactive magnetron sputtering with various substrate bias voltages ranging from 0 V to −150 V. It was revealed that when substrate bias voltage increased from 0 V to −120 V, the resistivity and infrared emissivity of TiN films increased first and then decreased. As substrate bias voltage continued to increase from −120 V to −150 V, the resistivity and infrared emissivity increased. The infrared emissivity of TiN films showed the lowest value of 0.48 at substrate bias voltage of −120 V.",

keywords = "infrared emissivity, magnetron sputtering, substrate bias voltage, TiN film",

author = "Linlin Lu and Jie Xu and Yi Liu and Xiaolei Su and Chunfang Ma and Jia Liu and Yongxia Kang",

note = "Publisher Copyright: {\textcopyright} 2022, The Minerals, Metals & Materials Society.",

year = "2022",

month = dec,

doi = "10.1007/s11664-022-09971-3",

language = "英语",

volume = "51",

pages = "7267--7274",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "12",

}

TY - JOUR

T1 - Effect of Substrate Bias Voltage on Infrared Characteristics of TiN Films

AU - Lu, Linlin

AU - Xu, Jie

AU - Liu, Yi

AU - Su, Xiaolei

AU - Ma, Chunfang

AU - Liu, Jia

AU - Kang, Yongxia

PY - 2022/12

Y1 - 2022/12

N2 - As one of the semiconductor films, titanium nitride (TiN) film is a promising candidate for infrared stealth technology. This study investigated the effect of substrate bias voltage on the infrared characteristics of TiN film. TiN films were prepared using direct current reactive magnetron sputtering with various substrate bias voltages ranging from 0 V to −150 V. It was revealed that when substrate bias voltage increased from 0 V to −120 V, the resistivity and infrared emissivity of TiN films increased first and then decreased. As substrate bias voltage continued to increase from −120 V to −150 V, the resistivity and infrared emissivity increased. The infrared emissivity of TiN films showed the lowest value of 0.48 at substrate bias voltage of −120 V.

AB - As one of the semiconductor films, titanium nitride (TiN) film is a promising candidate for infrared stealth technology. This study investigated the effect of substrate bias voltage on the infrared characteristics of TiN film. TiN films were prepared using direct current reactive magnetron sputtering with various substrate bias voltages ranging from 0 V to −150 V. It was revealed that when substrate bias voltage increased from 0 V to −120 V, the resistivity and infrared emissivity of TiN films increased first and then decreased. As substrate bias voltage continued to increase from −120 V to −150 V, the resistivity and infrared emissivity increased. The infrared emissivity of TiN films showed the lowest value of 0.48 at substrate bias voltage of −120 V.

KW - infrared emissivity

KW - magnetron sputtering

KW - substrate bias voltage

KW - TiN film

UR - http://www.scopus.com/inward/record.url?scp=85139702775&partnerID=8YFLogxK

U2 - 10.1007/s11664-022-09971-3

DO - 10.1007/s11664-022-09971-3

M3 - 文章

AN - SCOPUS:85139702775

SN - 0361-5235

VL - 51

SP - 7267

EP - 7274

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Effect of Substrate Bias Voltage on Infrared Characteristics of TiN Films

摘要

访问文件

其它文件与链接

指纹

引用此