Effect of CVI Temperature on the Microstructure of Nextel 480/SiO 2

Chen Zhaofeng; Zhang Litong; Cheng Laifei; Xu Yongdong; Jin Zhihao

doi:10.1515/secm.2002.10.6.403

Effect of CVI Temperature on the Microstructure of Nextel 480/SiO ₂

Chen Zhaofeng, Zhang Litong, Cheng Laifei, Xu Yongdong, Jin Zhihao

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

Nextel 480/SiO₂ composites were fabricated by Chemical Vapor Infiltration (CVI) using TEOS as precursor. The effect of temperature on the CVI process was investigated by determination of the weight gain of Nextel 480/SiO₂ and the correspondence between aggregate size and supersaturation. When carried out at 800°C, the faster deposition rate and larger SiO₂ aggregate size led to poor penetrability. When carried out at 750°C, the lengthened decomposition process caused the TEOS not to decompose completely until diffusion into the preform.

源语言	英语
页（从-至）	403-405
页数	3
期刊	Science and Engineering of Composite Materials
卷	10
期	6
DOI	https://doi.org/10.1515/secm.2002.10.6.403
出版状态	已出版 - 2002

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abstract = "Nextel 480/SiO2 composites were fabricated by Chemical Vapor Infiltration (CVI) using TEOS as precursor. The effect of temperature on the CVI process was investigated by determination of the weight gain of Nextel 480/SiO2 and the correspondence between aggregate size and supersaturation. When carried out at 800°C, the faster deposition rate and larger SiO2 aggregate size led to poor penetrability. When carried out at 750°C, the lengthened decomposition process caused the TEOS not to decompose completely until diffusion into the preform.",

author = "Chen Zhaofeng and Zhang Litong and Cheng Laifei and Xu Yongdong and Jin Zhihao",

year = "2002",

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AU - Zhaofeng, Chen

AU - Litong, Zhang

AU - Laifei, Cheng

AU - Yongdong, Xu

AU - Zhihao, Jin

PY - 2002

Y1 - 2002

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AB - Nextel 480/SiO2 composites were fabricated by Chemical Vapor Infiltration (CVI) using TEOS as precursor. The effect of temperature on the CVI process was investigated by determination of the weight gain of Nextel 480/SiO2 and the correspondence between aggregate size and supersaturation. When carried out at 800°C, the faster deposition rate and larger SiO2 aggregate size led to poor penetrability. When carried out at 750°C, the lengthened decomposition process caused the TEOS not to decompose completely until diffusion into the preform.

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DO - 10.1515/secm.2002.10.6.403

M3 - 文章

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EP - 405

JO - Science and Engineering of Composite Materials

JF - Science and Engineering of Composite Materials

IS - 6

ER -

Effect of CVI Temperature on the Microstructure of Nextel 480/SiO 2

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Effect of CVI Temperature on the Microstructure of Nextel 480/SiO ₂