Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis

Zhimin Li; Wancheng Zhou; Xiaolei Su; Fa Luo; Yunxia Huang; Cheng Wang

doi:10.1016/j.jallcom.2010.08.156

Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis

Zhimin Li, Wancheng Zhou, Xiaolei Su, Fa Luo, Yunxia Huang, Cheng Wang

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

61 引用（Scopus）

摘要

Boron-doped SiC powders were synthesized from the Si/C/B system in a nitrogen atmosphere by combustion synthesis. Results showed that boron benefited the crystallization of β-SiC, and that SiC solid solution with B acceptor doping was generated in combustion process. In the frequency range of 8.2-12.4 GHz, it was found that both real part ε′ and imaginary part ε′′ of complex permittivity of SiC samples decreased firstly, and then increased with increasing B content.

源语言	英语
页（从-至）	973-976
页数	4
期刊	Journal of Alloys and Compounds
卷	509
期	3
DOI	https://doi.org/10.1016/j.jallcom.2010.08.156
出版状态	已出版 - 21 1月 2011

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title = "Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis",

abstract = "Boron-doped SiC powders were synthesized from the Si/C/B system in a nitrogen atmosphere by combustion synthesis. Results showed that boron benefited the crystallization of β-SiC, and that SiC solid solution with B acceptor doping was generated in combustion process. In the frequency range of 8.2-12.4 GHz, it was found that both real part ε′ and imaginary part ε′′ of complex permittivity of SiC samples decreased firstly, and then increased with increasing B content.",

keywords = "B doping, Combustion synthesis, Dielectric properties, Point defects, SiC",

author = "Zhimin Li and Wancheng Zhou and Xiaolei Su and Fa Luo and Yunxia Huang and Cheng Wang",

year = "2011",

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doi = "10.1016/j.jallcom.2010.08.156",

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T1 - Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis

AU - Li, Zhimin

AU - Zhou, Wancheng

AU - Su, Xiaolei

AU - Luo, Fa

AU - Huang, Yunxia

AU - Wang, Cheng

PY - 2011/1/21

Y1 - 2011/1/21

N2 - Boron-doped SiC powders were synthesized from the Si/C/B system in a nitrogen atmosphere by combustion synthesis. Results showed that boron benefited the crystallization of β-SiC, and that SiC solid solution with B acceptor doping was generated in combustion process. In the frequency range of 8.2-12.4 GHz, it was found that both real part ε′ and imaginary part ε′′ of complex permittivity of SiC samples decreased firstly, and then increased with increasing B content.

AB - Boron-doped SiC powders were synthesized from the Si/C/B system in a nitrogen atmosphere by combustion synthesis. Results showed that boron benefited the crystallization of β-SiC, and that SiC solid solution with B acceptor doping was generated in combustion process. In the frequency range of 8.2-12.4 GHz, it was found that both real part ε′ and imaginary part ε′′ of complex permittivity of SiC samples decreased firstly, and then increased with increasing B content.

KW - B doping

KW - Combustion synthesis

KW - Dielectric properties

KW - Point defects

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=78449233571&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2010.08.156

DO - 10.1016/j.jallcom.2010.08.156

M3 - 文章

AN - SCOPUS:78449233571

SN - 0925-8388

VL - 509

SP - 973

EP - 976

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 3

ER -

Effect of boron doping on microwave dielectric properties of SiC powder synthesized by combustion synthesis

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